Výsledky vyhledávání - "Geng Wei Chang"

(Invited) Thin Film Transistors as Driving Devices for Attached Devices

Autor: Yue Kuo, Geng Wei Chang

Publikováno v: ECS Transactions. 64:145-153

TFTs can be used as driving or detecting devices for purposes of optical, chemical, or biological sensing, imaging, displays, etc. Assuming the stability is not an issue, the poly-Si, IGZO, and a-Si:H TFTs were compared with respect to the device dri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7353cda7b7910b6e8a6955277f494de6
https://doi.org/10.1149/06410.0145ecst

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Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Autor: Ya-Hsiang Tai, Kuan-Chang Chang, Yong-En Syu, Geng-Wei Chang, Fu-Yen Jian, Ya-Chi Hung, Tsung-Ming Tsai, Jhe-Ciou Jhu, Ting-Chang Chang

Publikováno v: IEEE Transactions on Electron Devices. 61:2119-2124

The instability of the gate bias and drain bias stresses is observed at high temperature in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The transfer characteristics of a-IGZO TFTs at different temperatures are also investigated in this pap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2632395561784cda865606d2240a9c59
https://doi.org/10.1109/ted.2014.2319105

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RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Publikováno v: The Journal of Supercritical Fluids. 85:183-189

We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65f79b2d19e6af9b204f6bb14f7efe3d
https://doi.org/10.1016/j.supflu.2013.09.002

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N 2 O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors

Autor: Ya-Hsiang Tai, Kuan-Chang Chang, Jhe Ciou Jhu, Fu Yen Jian, Geng Wei Chang, Tsung-Ming Tsai, Ya Chi Hung, Yong En Syu, Ting-Chang Chang

Publikováno v: Surface and Coatings Technology. 231:281-284

N 2 O plasma treatment suppressed the temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors (a-IGZO TFTs). For untreated devices, the transfer curve exhibited abnormal electrical properti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f4e099a5efaa72a7d2de5c8773f9e54
https://doi.org/10.1016/j.surfcoat.2012.04.086

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N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Autor: Jhe-Ciou Jhu, Ting-Chang Chang, Geng-Wei Chang, Tsung-Ming Tsai, Yong-En Syu, Fu-Yen Jian, Kuan-Chang Chang, Ya-Hsiang Tai

Publikováno v: ECS Transactions. 45:47-55

The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon dependence of the defects of a-IGZO active layer, the paper proposes the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::80eaa1d12216dd95b8790a1358042b76
https://doi.org/10.1149/04531.0047ecst

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N2O Plasma Treatment Suppressed Temperature-Dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Autor: Kuan-Chang Chang, Geng Wei Chang, Ting-Chang Chang, Fu Yen Jian, Yong En Syu, Jhe Ciou Jhu, Ya-Hsiang Tai, Tsung-Ming Tsai

Publikováno v: ECS Transactions. 45:169-178

The abnormal subthreshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon dependence of the defects of a-IGZO active layer, the paper proposes the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57191d35c84196280c91181458217fda
https://doi.org/10.1149/1.3701537

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Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure

Autor: Ya-Hsiang Tai, Geng-Wei Chang, Yao-Feng Chang, Yong-En Syu, Yu Ting Tsai, Ting-Chang Chang

Publikováno v: ECS Journal of Solid State Science and Technology. 1:Q91-Q95

aDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78758, USA bDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan cDepartment of Photonics

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2895743249b7b35af3ff919c541c94de
https://doi.org/10.1149/2.003205jss

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Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Autor: Ya-Hsiang Tai, Fu Yen Jian, Ya Chi Hung, Geng Wei Chang, Yong En Syu, Kuan-Chang Chang, Chun-Hao Tu, Ting-Chang Chang, Tsung-Ming Tsai

Publikováno v: Thin Solid Films. 520:1608-1611

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::699595b7000f7f4526e37d16b7d7ad9f
https://doi.org/10.1016/j.tsf.2011.08.104

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Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Autor: Simon M. Sze, Chih-Cheng Shih, Rui Zhang, Chih-Hung Pan, Kuan-Chang Chang, Jen-Chung Lou, Ya-Hsiang Tai, Yin-Chih Pan, Tian-Jian Chu, Ya-Liang Yang, Tai-Fa Young, Tsung-Ming Tsai, Jian-Yu Chen, Min-Chen Chen, Yu-Ting Su, Ting-Chang Chang, Yong-En Syu, Jung-Hui Chen, Geng-Wei Chang

Publikováno v: IEEE Electron Device Letters. 34:677-679

In this letter, a double-active-layer $({\rm Zr}{:}{\rm SiO}_{x}/{\rm C}{:}{\rm SiO}_{x})$ resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Four

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4eef6115af322f89f3c18e7f14ee098
https://doi.org/10.1109/led.2013.2250899

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