Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Geng Li Chua"'
Publikováno v:
IEEE Electron Device Letters. 40:957-960
In this letter, a group of laterally coupled alternating thickness (LCAT) mode resonators based on 12% scandium-doped aluminum nitride (Sc0.12Al0.88N) are reported. The LCAT mode resonators are realized in-house by sandwiching a layer of 1- $ {\mu }\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9be9ace3cbc019f2e2b2a2e2d93b6f3
https://doi.org/10.1109/led.2019.2910836
https://doi.org/10.1109/led.2019.2910836
Publikováno v:
IEEE Sensors Letters. 2:1-4
This article presents a new microelectromechanical system (MEMS) quadruple mass gyroscope (QMG) with symmetric design. Similar to the wine-glass vibrating gyroscope, the reported QMG has a symmetric structure design both in the driving and sensing mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406dd1e83f0ca07956e05cecd1a6fbe1
https://doi.org/10.1109/lsens.2018.2873000
https://doi.org/10.1109/lsens.2018.2873000
Publikováno v:
Sensors and Actuators A: Physical. 259:50-56
A fully decoupled z -axis MEMS gyroscope with wide bandwidth and high linearity is presented in this paper. The mechanical structure consists of a dual proof mass, which are mechanically coupled together using a pair of double folded springs. The ful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414fa9b60fc3c27a7945f995c622e676
https://doi.org/10.1016/j.sna.2017.03.027
https://doi.org/10.1016/j.sna.2017.03.027
Publikováno v:
2018 IEEE International Ultrasonics Symposium (IUS).
In a checker patterned lamb wave resonator, electrode patches with the square, diamond or round shape are usually arranged in the way that one electrode is surrounded by a group of four patches with an opposite electrical polarity to excite two-dimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::400bd62e9e1eddfbb3d078305c618872
https://doi.org/10.1109/ultsym.2018.8579913
https://doi.org/10.1109/ultsym.2018.8579913
Publikováno v:
2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC).
Metal based wafer level eutectic bonding has been developed for hermetic sealing providing consistent gas environment for MEMS Silicon (Si) sensor devices as well as protecting the MEMS structure. The use of Aluminum (Al) and Germanium (Ge) materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eefe805a2f185702194d43e9686ca1d
https://doi.org/10.1109/eptc.2015.7412394
https://doi.org/10.1109/eptc.2015.7412394
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
We report a variety of CMOS-compatible radio frequency micro electromechanical system (RFMEMS) devices that are built within a high performance platform suitable for RF applications. Resonators and Filters are test vehicles of the platform, which fea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00e71b91c086422408f7ee7655e00fb0
https://doi.org/10.1109/edssc.2015.7285237
https://doi.org/10.1109/edssc.2015.7285237
Autor:
Pushpapraj Singh, Anh Tuan Do, Geng Li Chua, Tony Tae-Hyoung Kim, Jayaraman Karthik Gopal, Ngoc Le Ba
Publikováno v:
2014 International SoC Design Conference (ISOCC).
Applications such as Logging-While-Drilling (LWD), automotive, and aerospace systems require electronics whose operating temperature is much higher than that of conventional consumer electronics. One of the most critical functional blocks for high te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b642db7be46cff0d69b5c35c9fa2fae9
https://doi.org/10.1109/isocc.2014.7087592
https://doi.org/10.1109/isocc.2014.7087592
This paper proposes a cantilever-based nanoelectro-mechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 $^{\circ}{\rm C}$ ) in rugged electronics. The memory b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb7aff32cc5522914bbda0de018accb6
https://hdl.handle.net/10356/79383
https://hdl.handle.net/10356/79383
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36fa7414c8a9a64fd22ccb2aebfca71c
http://hdl.handle.net/10220/13480
http://hdl.handle.net/10220/13480
Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectrome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::427e1a028e5ad50114202d27534d6b6a
http://hdl.handle.net/10220/11329
http://hdl.handle.net/10220/11329