Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gene Everad Parris"'
Autor:
Stephan Sinkwitz, Manuel Jaramillo, Gene Everad Parris, Masakazu Sanada, Patrick Wong, S. Wang, Minoru Sugiyama
Publikováno v:
SPIE Proceedings.
With the introduction of immersion lithography into IC manufacturing for the 45nm node, pattern collapse and line width roughness (LWR) remain critical challenges that can be addressed by implementing formulated surface conditioners. Surface conditio
Autor:
Brenda Ross, Peng Zhang, Simon G. Kaplan, Zarka Zarkov, Bridgette M. Budhlall, John H. Burnett, Xiaoping Gao, Gene Everad Parris
Publikováno v:
Optical Microlithography XVIII.
For the next-generation immersion lithography technology, there is a growing interest in the immersion fluids having a refractive index larger than 1.5 and low absorbance at 193nm wavelength. In this paper, we report our effort in identifying new imm