Výsledky vyhledávání

Atomic Layer Deposition for All-Solid-State 3D-Integrated Batteries

Autor: Knoops, H.C.M., Donders, M.E., Baggetto, L., Sanden, van de, M.C.M., Notten, P.H.L., Kessels, W.M.M., Bent, S., Gendt, De, S.

Publikováno v: Atomic layer deposition applications 5 : Proceedings of the 216th ECS meeting, 4-9 October 2009, Vienna, Austria, 333-344
STARTPAGE=333;ENDPAGE=344;TITLE=Atomic layer deposition applications 5 : Proceedings of the 216th ECS meeting, 4-9 October 2009, Vienna, Austria

All-solid-state 3D integrated batteries can reach the energy storage capacity required for future wireless devices by exploiting the third dimension. Conformal deposition techniques such as atomic layer deposition (ALD) are needed to deposit the batt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffc4101a93d4a1c8cb5057768e5195ab
https://doi.org/10.1149/1.3205068

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Plasma-Assisted ALD TiN/Al2O3 stacks for MIMIM Trench Capacitor Applications

Autor: Hoogeland, D., Jinesh, K.B., Voogt, F.C., Besling, W.F.A., Lamy, Y., Roozeboom, F., Sanden, van de, M.C.M., Kessels, W.M.M., Gendt, de, S.

Publikováno v: Atomic layer deposition applications 5 : Proceedings of the 5th Symposium on Atomic Layer Deposition as part of the 216th Meeting of the Electrochemical Society 5-7 October 2009, Vienna, 389-397
STARTPAGE=389;ENDPAGE=397;TITLE=Atomic layer deposition applications 5 : Proceedings of the 5th Symposium on Atomic Layer Deposition as part of the 216th Meeting of the Electrochemical Society 5-7 October 2009, Vienna

In this paper we report on the overall plasma-assisted ALD processes of Al2O3 and TiN conducted in a single reactor chamber and at a single temperature (340 oC). The individual Al2O3 and TiN films in the stack were consecutively deposited in such a w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d451fbd5c032f3665938f0ed26bb10a
https://doi.org/10.1149/1.3205073

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Periodical

Investigation of the Li-Ion Insertion Mechanism for Amorphous and Anatase TiO2 Thin-Films

Autor: Gendt, De

Publikováno v: Journal of the Electrochemical Society; January 2019, Vol. 166 Issue: 2 pA1-A9, 9p

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Plasma-assisted atomic layer deposition of SrTiO3 : stoichiometry and crystallization study by spectroscopic ellipsometry

Autor: Longo, V., Leick, N., Roozeboom, F., Kessels, W.M.M., Gendt, de, A., Londergan, A., Bent, S., Straten, van der, O., Delabie, A.

Publikováno v: Proceedings of the 220th ECS meeting and Electrochemical Energy Summit, October 9-14, 2011, Boston, Massachusetts, 63-72
STARTPAGE=63;ENDPAGE=72;TITLE=Proceedings of the 220th ECS meeting and Electrochemical Energy Summit, October 9-14, 2011, Boston, Massachusetts

Strontium titanate (SrTiO3, STO) films were deposited by plasma-assisted ALD using cyclopentadienyl-based Sr- and Ti-precursors with O2 plasma as the oxidizing agent. Spectroscopic ellipsometry (SE) was employed to determine the thickness and the opt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aec9c71b21ced5eaf5a7299b87bc9c5f
https://research.tue.nl/nl/publications/48973615-c866-490c-a3ef-a277f5a113d8

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Atomic layer deposition applications 6

Autor: Elam, J.W., Londergan, A., Gendt, De, S., Bent, S.F., Straten, van der, O., Roozeboom, F., Delabie, A.

The sixth symposium on Atomic Layer Deposition Applications was held October 10 to October 15, 2010 in Las Vegas, Nevada, as part of the 218th Meeting of The Electrochemical Society. The continuously expanding realm of Atomic Layer Deposition (ALD) a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::17363d10436f39cd27d0fa74c392d063
https://research.tue.nl/nl/publications/1d8ae230-535e-4dc0-b4fc-249101a6f6a3

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Remote plasma atomic layer deposition of Co3O4 thin films

Autor: Donders, M.E., Sanden, van de, M.C.M., Kessels, W.M.M., Notten, P.H.L., Knoops, H.C.M., Bent, S., Gendt, De, S.

Publikováno v: Atomic layer deposition applications 5 : Proceedings of the 216th ECS meeting, 4-9 October 2009, Vienna, Austria, 39-47
STARTPAGE=39;ENDPAGE=47;TITLE=Atomic layer deposition applications 5 : Proceedings of the 216th ECS meeting, 4-9 October 2009, Vienna, Austria

Cobalt oxide has been deposited with remote plasma ALD over a wide temperature window (100 - 400 °C), using CoCp2 as cobalt precursor and with a remote O2 plasma as oxidant source. This novel combination resulted in the deposition of high density (6

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::ca0f2620ae47e13b1417e737189127a0
https://research.tue.nl/nl/publications/041d9c2c-5806-4235-90a0-642319ee46bb

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Deposition of TiN and TaN by remote plasma ALD for diffusion barrier applications

Autor: Knoops, H.C.M., Baggetto, L., Langereis, E., Sanden, van de, M.C.M., Klootwijk, J.H., Roozeboom, F., Niessen, R.A.H., Notten, P.H.L., Kessels, W.M.M., Londergan, A., Straten, van der, O., Bent, S.F., Elam, J.W., Gendt, de, S., Kang, S.B.

Publikováno v: Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA, 45-54
STARTPAGE=45;ENDPAGE=54;TITLE=Proceedings of the 3rd symposium on Atomic Layer Deposition Applications as part of the 212th ECS Meeting, 8-9 October 2007, Washington D.C., USA

TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinations of Ta(N(CH[sub]3[/sub])[sub]2[/sub])[sub]5[/sub] precursor and H[sub]2[/sub] plasma and TiCl[sub]4[/sub] precursor and H[sub]2[/sub]-N[sub]2[/sub]

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad10a6929cee3546f66f2434011427ae
https://research.tue.nl/en/publications/11db749d-43b5-4614-95d6-2cbf71b19be0

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