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Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy

Autor: Dursap, T., Vettori, M., Botella, C., Regreny, P., Blanchard, N., Gendry, M., Chauvin, N., Bugnet, M., Danescu, A., Penuelas, J.

The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and maintain the wurtzite (WZ) crystal phase in self-assisted NWs. By choo

Externí odkaz: http://arxiv.org/abs/2007.16047

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Crystal phase engineering of self-catalyzed GaAs nanowires using RHEED diagram

Autor: Dursap, T., Vettori, M., Danescu, A., Botella, C., Regreny, P., Patriarche, G., Gendry, M., Penuelas, J.

It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux. In this work we present a method to control the wurtzite

Externí odkaz: http://arxiv.org/abs/1912.06502

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Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction

Autor: Letoublon, A., Favre-Nicolin, V., Renevier, H., Proietti, M. G., Monat, C., Gendry, M., Marty, O., Priester, C.

We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54nm. T

Externí odkaz: http://arxiv.org/abs/cond-mat/0309522

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