Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Gen-ichi Hatakoshi"'
Autor:
Gen-ichi Hatakoshi
Publikováno v:
Fundamentals of Phosphors ISBN: 9781315219981
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5afe3bee9a88d8ba6416681b13aad7ff
https://doi.org/10.1201/9781315219981-21
https://doi.org/10.1201/9781315219981-21
Autor:
Gen-ichi Hatakoshi
Publikováno v:
The Journal of The Institute of Image Information and Television Engineers. 66:281-286
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4c4c287945d976d0354506a929f96d
https://doi.org/10.3169/itej.66.281
https://doi.org/10.3169/itej.66.281
Publikováno v:
Japanese Journal of Applied Physics. 46:5419-5425
A general device simulator has been constructed for designing high-efficiency light-emitting diodes (LEDs). The optical characteristics, including the spatial profiles of the light extracted from LEDs, are important for practical LED applications suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27af262c39c3c643022a54d9d679b7ec
https://doi.org/10.1143/jjap.46.5419
https://doi.org/10.1143/jjap.46.5419
Autor:
Mitsuhiro Kushibe, Masao Nishioka, Gen-ichi Hatakoshi, Rei Hashimoto, Mizunori Ezaki, Yasuhiko Arakawa
Publikováno v:
Journal of Crystal Growth. 298:658-662
For the growth of GaAs and AlGaAs by metalorganic chemical vapor deposition (MOCVD), the residual carrier concentration was confirmed to follow the relation of [Carrier concentration] ∝ [V/III] −4/3 . As this relation fit various growth condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a69634e31c5af02876b98427c92a216
https://doi.org/10.1016/j.jcrysgro.2006.10.181
https://doi.org/10.1016/j.jcrysgro.2006.10.181
Autor:
Gen-ichi Hatakoshi
Publikováno v:
Optical Review. 10:307-314
Output beam characteristics have been analyzed by numerical simulation for semiconductor lasers with various waveguide structures. It was found that the beam quality factors depend significantly on the transverse-mode confining structures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a2b4f5fd7030c058532a92da9676131
https://doi.org/10.1007/s10043-003-0307-1
https://doi.org/10.1007/s10043-003-0307-1
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 14:303-323
Device characteristics of GaN-based semiconductor lasers have been analysed by numerical calculation. Anti-guide-like behaviour of the waveguide mode appears in InGaN laser structures where the cladding layers have insufficient thickness. Such phenom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155d8b979ec9f1e8f539c4aa5fb52e5f
https://doi.org/10.1002/jnm.414
https://doi.org/10.1002/jnm.414
Autor:
Tetsuo Narita, Kotaro Zaima, Gen-ichi Hatakoshi, Koichi Tachibana, Shinya Nunoue, Shinji Saito, Hajime Nago
Publikováno v:
physica status solidi c. 5:2195-2197
We investigate the internal quantum efficiency of InGaN-based Light Emitting Diodes (LEDs) from the semiconductor rate equation of pulse current injection. A method is presented for estimating the internal quantum efficiency based on data of electrol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03c618f966d5c2dd3b49841d1042a53e
https://doi.org/10.1002/pssc.200778538
https://doi.org/10.1002/pssc.200778538
Autor:
S. Saito, Masaaki Onomura, Shinya Nunoue, Gen-ichi Hatakoshi, John Rennie, R. Nakasuji, Katsunobu Sasanuma, Lisa Sugiura, Johji Nishio, Kazuhiko Itaya
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:765-770
We investigated the far-field patterns perpendicular to the junction plane under room-temperature current excitation and analyzed the transverse modes of nitride-based laser diodes with various types of AlGaN cladding layers. It was found that nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d731deab689592058a45d177afa8fb
https://doi.org/10.1109/2944.788449
https://doi.org/10.1109/2944.788449
Autor:
John Rennie, Gen-ichi Hatakoshi, Hideto Sugawara, Masayuki Ishikawa, Shinya Nunoue, Masaaki Onomura
Publikováno v:
Journal of Crystal Growth. :711-715
The electrical properties of various metal contacts to both n-type and p-type GaN were investigated to determine the underlying trend between the metallic contact workfunction and the resultant Schottky barrier height between the said contact and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58da3b239e3dae53ecda008628a470d1
https://doi.org/10.1016/s0022-0248(98)00267-x
https://doi.org/10.1016/s0022-0248(98)00267-x
Autor:
Gen-ichi Hatakoshi
Publikováno v:
The Review of Laser Engineering. 25:557-561
Development of short-wavelength semiconductor lasers had made a large contribution to the realization of high density optical memories. For example, InGaAlP red lasers have been used as light sources for high capacity optical disc systems (DVD). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b80f6dfc9829f76e3dac84c143bb1349
https://doi.org/10.2184/lsj.25.557
https://doi.org/10.2184/lsj.25.557