Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Gemma Rius"'
Autor:
Ivan Lopez Paz, Philippe Godignon, Neil Moffat, Giulio Pellegrini, Joan Marc Rafí, Gemma Rius
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Silicon carbide (SiC) has outstanding physical properties therefore, diodes based on SiC are being considered for many radiation detection applications such as particle accelerator experiments and medical dosimetry. Moreover, by reducing the
Externí odkaz:
https://doaj.org/article/f25a3a6651b040c98b261fadd04394e6
Autor:
Francesca Zummo, Pietro Esposito, Huilei Hou, Cecilia Wetzl, Gemma Rius, Raphaela Tkatchenko, Anton Guimera, Philippe Godignon, Maurizio Prato, Elisabet Prats-Alfonso, Alejandro Criado, Denis Scaini
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2022)
In recent years, the quest for surface modifications to promote neuronal cell interfacing and modulation has risen. This course is justified by the requirements of emerging technological and medical approaches attempting to effectively interact with
Externí odkaz:
https://doaj.org/article/2a360333824b4c9a86c477e02601e24b
Publikováno v:
APL Materials, Vol 8, Iss 10, Pp 100702-100702-16 (2020)
For over 15 years, the number of studies on graphene electronics has not ceased growing. The rich physics, a set of outstanding properties, and the envisioned range of potential applications have consolidated graphene as a research field in its own.
Externí odkaz:
https://doaj.org/article/861effef76124ca995b344dba41c2ca6
Autor:
Jordi Sort, Gemma Rius
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 2069 (2021)
As a way to celebrate the 10th anniversary of the journal Nanomaterials, this Special Issue within the section ‘Nanocomposite thin film and 2D materials’ provides an overview of the wide spectrum of research challenges and applications in the fie
Externí odkaz:
https://doaj.org/article/dd2fafd455b345369e1796a939c6efbf
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 215-222 (2015)
Many nanofabrication methods based on scanning probe microscopy have been developed during the last decades. Local anodic oxidation (LAO) is one of such methods: Upon application of an electric field between tip and surface under ambient conditions,
Externí odkaz:
https://doaj.org/article/afb1508f39f244d0aa9a9198ace517a0
Autor:
Yann Jousseaume, François Cauwet, Judith Woerle, Ulrike Grossner, Sofia Aslanidou, Gemma Rius, Philippe Godignon, Gabriel Ferro
Publikováno v:
Materials Science Forum. 1089:9-14
The reconstruction of 4°off 4H-SiC surfaces was investigated using Si melting at 1550°C in a SiC/Si/SiC sandwich configuration. Despite systematically obtaining a macrostepped morphology over the entire areas in contact with the liquid Si, the step
Publikováno v:
Materials Science Forum. 1062:603-607
Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when sili
Publikováno v:
2022 IEEE 22nd International Conference on Nanotechnology (NANO).
Autor:
Sofía Otero Ugobono, J.M. Rafi, Philippe Godignon, G. Pellegrini, Gemma Rius, M.C. Jiménez Ramos, J. García López, A. García Osuna
Publikováno v:
Materials Science Forum 1062: 458-462 (2022).
Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in har
Autor:
Joan Marc Rafi, Gemma Rius, Gregor Kramberger, Sofia Otero Ugobono, Philippe Godignon, Giulio Pellegrini, Isao Tsunoda, Michael Moll, Kenichiro Takakura, M. Yoneoka
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
instname
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated t