Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Gela Kipshidze"'
Autor:
Yuxuan Jiang, Maksim Ermolaev, Gela Kipshidze, Seongphill Moon, Mykhaylo Ozerov, Dmitry Smirnov, Zhigang Jiang, Sergey Suchalkin
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Semiconductors with large Landé g-factors allow for both highly spin-polarized states, and precise control of the spin dynamics. Here, the authors make superlattices of two semiconductors, InSb, and InAsSb, and by tuning the conduction and valence b
Externí odkaz:
https://doaj.org/article/71dfbd6820e041638226f06388b9a90d
Autor:
Ruiyan Liu, Leon Shterengas, Aaron Stein, Gela Kipshidze, Dmitri Zakharov, Kim Kisslinger, Gregory L. Belenky
Publikováno v:
Photonics, Vol 9, Iss 12, p 891 (2022)
Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 µm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the lase
Externí odkaz:
https://doaj.org/article/32f46c1dde4e434d96d7693bc7c4a0ea
Publikováno v:
Photonics, Vol 3, Iss 2, p 27 (2016)
Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized u
Externí odkaz:
https://doaj.org/article/f6acd527b9c74453a92823174bd0f3f8
Publikováno v:
Journal of Electronic Materials. 50:5522-5528
Epitaxial regrowth of antimonide-based heterostructures is required either to improve device performance parameters or to achieve new functionalities. This work compares two major methods used for surface preparation for subsequent epitaxial regrowth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b253eefaeb29b663364050981734af4
https://doi.org/10.1007/s11664-021-09091-4
https://doi.org/10.1007/s11664-021-09091-4
Publikováno v:
Applied Physics Letters. 122:131102
Continuous wave room temperature operation of 2 μm GaSb-based photonic-crystal surface-emitting diode lasers has been realized. The deep etched square mesa devices showed threshold current densities of 500 A/cm2 at 20 °C. The epi-side down mounted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75ff46fb4513192d9a7d3536a45d627c
https://doi.org/10.1063/5.0137151
https://doi.org/10.1063/5.0137151
Publikováno v:
IEEE Photonics Technology Letters. 32:1017-1020
The interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b5c6bfc099ce91105befc6e4a196ef
https://doi.org/10.1109/lpt.2020.3009663
https://doi.org/10.1109/lpt.2020.3009663
Autor:
Takashi Hosoda, Tao Feng, Gregory Belenky, Chu C. Teng, Gerard Wysocki, Jonas Westberg, Gela Kipshidze, Leon Shterengas, Alexey Belyanin
Publikováno v:
Journal of Lightwave Technology. 38:1895-1899
The passively mode-locked type-I quantum well cascade diode lasers operating near 2.7 and 3.2 μm generated trains of the ∼10 ps long pulses with average power up to 10 mW. The devices based on laser heterostructures with reinforced carrier confine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db65850742c2d0cebbe86192e3591086
https://doi.org/10.1109/jlt.2020.2971605
https://doi.org/10.1109/jlt.2020.2971605
Autor:
Yuxuan Jiang, Maksim Ermolaev, Gela Kipshidze, Seongphill Moon, Mykhaylo Ozerov, Dmitry Smirnov, Zhigang Jiang, Sergey Suchalkin
Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18d592b3cfab22259a50964dd7ea41a1
http://arxiv.org/abs/2201.01938
http://arxiv.org/abs/2201.01938
Autor:
Sergey Suchalkin, Boris Laykhtman, G. Belenky, Stefan P. Svensson, Gela Kipshidze, Jhair Alzamora
Publikováno v:
Solid State Communications. 358:115010
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e1133082ac30f57d9a67e6b062b1bca
https://doi.org/10.1016/j.ssc.2022.115010
https://doi.org/10.1016/j.ssc.2022.115010
Autor:
Jiang Jiang, Gela Kipshidze, Gregory Belenky, Takashi Hosoda, Ruiyan Liu, Aaron Stein, Leon Shterengas
Publikováno v:
Electronics Letters. 56:388-390
The vacuum pocket retaining molecular beam epitaxial regrowth of the nano-patterned GaSb surface was demonstrated. The high contrast 2D photonic crystal layer was incorporated into the test 2 µm emitting laser heterostructure. The photonic dispersio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b79e7e011a74d7ca1425a14c4eda2864
https://doi.org/10.1049/el.2019.3710
https://doi.org/10.1049/el.2019.3710