Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Gek Soon Chua"'
Publikováno v:
Photomask Technology 2019.
Silicon Photonics design layouts require use of curved shapes, since many of the structures built to route light through silicon are designed to curve smoothly to minimize the loss of signal strength. The design-to-silicon flow involves steps like De
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd0e83aca7286bb8a0b3a9699a0975c6
https://doi.org/10.1117/12.2539054
https://doi.org/10.1117/12.2539054
Autor:
Todd Bailey, Wei-Long Wang, Weijie Lu, Jed H. Rankin, Yee Mei Foong, Gek Soon Chua, Paul Ackmann
Publikováno v:
Photomask Technology 2019.
With 193nm optical lithography being extended to 12nm design rules and beyond, quality and performance requirements for photomasks are becoming increasingly challenged to support the increased pattern complexity. Additionally, interactions between ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db04df6da07a379c0a4d8368683ebd5a
https://doi.org/10.1117/12.2536745
https://doi.org/10.1117/12.2536745
Autor:
Gek Soon Chua, Weijie Lua, Yee Mei Foong, Weilong Wang, Bailey, Todd, Ackmann, Paul, Rankin, Jed
Publikováno v:
Proceedings of SPIE; 7/30/2019, Vol. 11148, p111480H-1-111480H-12, 12p
Publikováno v:
Microelectronic Engineering. 75:155-164
Downscaling of critical dimensions in semiconductor circuits has been pushing photolithography to print features below the wavelength of the light source. However, severe optical proximity effects and small depth of focus (DOF) for isolated lines hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c7d6103ef637b38bef303037dcf923d
https://doi.org/10.1016/j.mee.2004.04.001
https://doi.org/10.1016/j.mee.2004.04.001
Publikováno v:
Microelectronic Engineering. 71:139-149
In this paper, we have systematically investigated the dependencies of k1 on illumination conditions such as coherence setting and opening angle in off-axis illumination scheme. As result, conventional Rayleigh's equations are not sufficient to addre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896dacbb9d41fd5269f95972c7ea7d37
https://doi.org/10.1016/j.mee.2003.10.003
https://doi.org/10.1016/j.mee.2003.10.003
Autor:
Piyush Verma, Keith Standiford, Robert C. Pack, Akira Fujimura, Todd P. Lukanc, Gek Soon Chua, Linyong Pang, Fadi Batarseh, Guo Xiang Ning
Publikováno v:
SPIE Proceedings.
A methodology is described wherein a calibrated model-based ‘Virtual’ Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc60b9b700de6cf13dff6ab6b63ad07
https://doi.org/10.1117/12.2069613
https://doi.org/10.1117/12.2069613
Autor:
Christian Bürgel, Kushlendra Mishra, Gek Soon Chua, Peter Buck, Ingo Bork, Sankaranarayanan Paninjath, Keith Standiford
Publikováno v:
SPIE Proceedings.
Shrinking feature sizes and the need for tighter CD (Critical Dimension) control require the introduction of new technologies in mask making processes. One of those methods is the dose assignment of individual shots on VSB (Variable Shaped Beam) mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e53c2ada5f31d854ef8e33d9ba622f5
https://doi.org/10.1117/12.2069617
https://doi.org/10.1117/12.2069617
Publikováno v:
SPIE Proceedings.
In this paper we discuss the EUV OPC modeling challenges and potential solutions, as well as OPC integration requirements to support the forthcoming application of EUV lithography. 10-nm-node OPC modeling is considered as an example. Wafer and mask p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a492bacdb8c5508b7b0ee909a920433
https://doi.org/10.1117/12.2046341
https://doi.org/10.1117/12.2046341
Publikováno v:
SPIE Proceedings.
The 50keV ebeam exposure of EUV blanks leads to additional electron backscattering from the tantalum layer and the mirror portion of the blank substrate that cannot be adequately corrected by in-tool algorithms. Coupling this additional backscatter w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f87637e8edd5f2a73cdc67cd25b7ac50
https://doi.org/10.1117/12.2023093
https://doi.org/10.1117/12.2023093
Autor:
Tamer Coskun, Gek Soon Chua, Keith Standiford, Ralph Schlief, Chris Clifford, Craig Higgins, Yi Zou, Germain Fenger
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Several methods are evaluated to improve the accuracy of extreme ultraviolet (EUV) lithography OPC models by including additional physical effects which are not commonly used in deep ultraviolet (DUV) OPC. The primary additions to the model in this w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6841d9b21b0e72136c5adea3fb664282
https://doi.org/10.1117/12.2009281
https://doi.org/10.1117/12.2009281