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Epitaxial ReSi2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of [100] axial channeling increases with increasing exposure of the ReSi2 sample to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od________38::641b77e19d972dcf5c701ff94100ef49
https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90
https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90
Channeling of a He beam in the energy range from 1.4 to 2.7 MeV in a polyatomic epitaxial ReSi2 film (∼150 nm thick) was studied by detecting backscattered He ions. The critical angles and the minimum yields of both the heavy (Re) and the light (Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od________38::7d3cbc2e2eaf2ef46fa829e72969fddb
https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90
https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90
Publikováno v:
Proceedings of SPIE; Nov2011, Issue 1, p79520L-79520L-8, 8p
Publikováno v:
Proceedings of SPIE; Nov2011, Issue 1, p79520M-79520M-6, 6p
Publikováno v:
Proceedings of SPIE; Nov2009, Issue 1, p722907-722907-8, 8p
Autor:
Serkland, Darwin K., Peake, Gregory M., Geib, Kent M., Lutwak, Robert, Garvey, R. Michael, Varghese, Mathew, Mescher, Mark
Publikováno v:
Proceedings of SPIE; Nov2006, Issue 1, p613208-613208-11, 11p
Publikováno v:
Proceedings of SPIE; Nov2006, Issue 1, p61320A-61320A-10, 10p
Publikováno v:
Proceedings of SPIE; Nov2005, Issue 1, p69-74, 6p
Autor:
Geib, Kent M., Serkland, Darwin K., Allerman, Andrew A., Hargett, Terry W., Choquette, Kent D.
Publikováno v:
Proceedings of SPIE; Nov2003, Issue 1, p207-212, 6p