High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding

Autor: Ashok T. Ramu, Gehong Zeng, Joshua M. O. Zide, Ali Shakouri, Je-Hyeong Bahk, Zhixi Bian, Peter Burke, Arthur C. Gossard, John E. Bowers, Di Liang, Hong Lu, Rajeev Singh

Publikováno v: Bahk, Je-Hyeong; Zeng, Gehong; Zide, Joshua M.; Lu, Hong; Singh, Rajeev; Liang, Di; et al.(2010). High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding. Journal of Electronic Materials, 39(8), pp 1125-1132. doi: 10.1007/s11664-010-1258-5. Retrieved from: http://www.escholarship.org/uc/item/58k423jd

A device fabrication and measurement method utilizing a SiO2–SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffer from the side-effect of substrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a585bac6e0aabe10b05a27911c6a35e5
https://doi.org/10.1007/s11664-010-1258-5

A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe

Autor: K. Fukutani, Zhixi Bian, Ali Shakouri, Gehong Zeng, Younès Ezzahri

Publikováno v: Microelectronics Journal. 39:981-991

Most of the conventional thermal management techniques can be used to cool the whole chip. Since thermal design requirements are mostly driven by the peak temperatures, reducing or eliminating hot spots could alleviate the design requirements for the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2163689462378343ab87bcaac9af0ce8
https://doi.org/10.1016/j.mejo.2007.06.007

On-chip high speed localized cooling using superlattice microrefrigerators

Autor: James Christofferson, Yan Zhang, Ali Shakouri, John E. Bowers, Edward T. Croke, Gehong Zeng

Publikováno v: IEEE Transactions on Components and Packaging Technologies. 29:395-401

In this paper, we addressed heating problems in integrated circuits (ICs) and proposed a thin-film thermionic cooling solution using Si/SiGe superlattice microrefrigerators. We compared our technology with the current most common solution, thermoelec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::331d69dac1487b124e1cb3f3d94f0e40
https://doi.org/10.1109/tcapt.2006.875884

High-power-density spot cooling using bulk thermoelectrics

Autor: Ali Shakouri, Yan Zhang, Gehong Zeng

Publikováno v: Zhang, Y; Shakouri, A; & Zeng, G H. (2004). High-power-density spot cooling using bulk thermoelectrics. Applied Physics Letters, 85(14), 2977-2979. UC Santa Cruz: Retrieved from: http://www.escholarship.org/uc/item/0j2975j6

We demonstrate a three-dimensional (3D) bulk silicon microcooler, which has the advantages of high cooling power densities and is less dependent on thermoelectric element's thickness as compared with the same device with one-dimensional (1D) geometry

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c6c91ed8399419497d22ffd9e08213e
https://doi.org/10.1063/1.1800290

Semimetal/semiconductor nanocomposites for thermoelectrics

Autor: Peter Burke, Ashok T. Ramu, Hong Lu, Je-Hyeong Bahk, Gehong Zeng, John E. Bowers, Arthur C. Gossard

Publikováno v: Advanced materials (Deerfield Beach, Fla.). 23(20)

In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c647ca6a7d00a2aae7520fe43c75793e
https://pubmed.ncbi.nlm.nih.gov/21751469