Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Geethanjali Raveendran"'
Publikováno v:
BMC Cancer, Vol 24, Iss 1, Pp 1-12 (2024)
Abstract In oncology anti—PD1 / PDL1 therapy development for solid tumors, objective response rate (ORR) is commonly used clinical endpoint for early phase study decision making, while progression free survival (PFS) and overall survival (OS) are w
Externí odkaz:
https://doaj.org/article/2fcb5d71d6c540c39d5d70e19e351802
Publikováno v:
2013 International Conference on Circuits, Power and Computing Technologies (ICCPCT).
A Double Gate(DG) FinFET is designed in 30nm, 60nm technology with thickness of dielectric ranging from 1.2nm to 2.5nm and the observations are studied. Then DIBL of the device is calculated. The Double Gate(DG) FinFET is one of the promising devices