Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Geetak Gupta"'
Autor:
Davide Bisi, Brian Romanczyk, Xiang Liu, Geetak Gupta, Tobias Brown-Heft, Ron Birkhahn, Rakesh Lal, Carl J. Neufeld, Stacia Keller, Primit Parikh, Umesh K. Mishra, Lee McCarthy
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ce8bf602e2582c3f9eb35447cc6453
https://doi.org/10.1109/wipda49284.2021.9645102
https://doi.org/10.1109/wipda49284.2021.9645102
Publikováno v:
ECS Meeting Abstracts. :1345-1345
Gallium Nitride has been proven to be a superior material system for high performance, reliable, high power transistors enabling high efficiency in power conversion applications [1,2]. In this paper we highlight some recent advances in GaN technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cca86a380a2085131094069e8403a04
https://doi.org/10.1149/ma2022-02371345mtgabs
https://doi.org/10.1149/ma2022-02371345mtgabs
Autor:
Davide Bisi, Rakesh K. Lal, YuLu Huang, Bill Cruse, Philip Zuk, Umesh K. Mishra, John Gritters, Carl J. Neufeld, J. McKay, Tsutomu Hosoda, Primit Parikh, Geetak Gupta, Yifeng Wu, Masamichi Kamiyama
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
Short-circuit capability is essential for the adoption of GaN power devices in motor drives for industrial and automotive applications. In this work, we report an innovative solution for GaN power switches to achieve short-circuit withstanding time (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa593d1e491f94eb99c498ef96937592
https://doi.org/10.1109/apec42165.2021.9486987
https://doi.org/10.1109/apec42165.2021.9486987
Publikováno v:
IEEE Electron Device Letters. 36:669-671
In this letter, we provide guidelines for the design of the base stack of a GaN-base HET suitable for high-frequency operation, through full band cellular Monte Carlo device simulations. The experimental curves are matched by our model and the transm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35dd8fe56da6c30dec35bfa8fbfc58d2
https://doi.org/10.1109/led.2015.2436922
https://doi.org/10.1109/led.2015.2436922
Publikováno v:
IEEE Electron Device Letters. 36:439-441
Current gain is demonstrated in III-N hot electron transistors (HETs) for the first time using base current controlled common emitter characteristics. The emitter and collector barriers ( $\phi _{\mathrm {BE}}$ and $\phi _{\mathrm {BC}})$ are impleme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a559891a349cf68cf97e5cd7f9bf2715
https://doi.org/10.1109/led.2015.2416345
https://doi.org/10.1109/led.2015.2416345
Autor:
Geetak Gupta, Matthew A. Laurent, Umesh K. Mishra, Haoran Li, Edwin Acuna, Donald J. Suntrup, Stacia Keller
Publikováno v:
IEEE Electron Device Letters. 36:23-25
Transistor operation by common emitter (CE) current modulation is shown for the first time in III-N hot electron transistors (HETs). The emitter and collector barriers ( $\phi _{\mathrm {\mathbf {BE}}}$ and $\phi _{\mathrm {\mathbf {BC}}}$ ) are impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c259500c2d13c2b95f4f142a5e018d7
https://doi.org/10.1109/led.2014.2373375
https://doi.org/10.1109/led.2014.2373375
Publikováno v:
IEEE Electron Device Letters. 34:1500-1502
A unipolar transistor consisting of an In0.53Ga0.47As (InGaAs) channel and a III-Nitride (III-N)-based drain-region with a maximum on-current of 192 mA/mm is reported. This unique device is realized by employing wafer-bonding to a current aperture ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29ec255ab35ad9821bed18270b57175a
https://doi.org/10.1109/led.2013.2286954
https://doi.org/10.1109/led.2013.2286954
Publikováno v:
Semiconductor Science and Technology. 33:015018
This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::923d0db139cf9a153841c6e0a3605efa
https://doi.org/10.1088/1361-6641/aa89dd
https://doi.org/10.1088/1361-6641/aa89dd
Autor:
Haoran Li, Matthew A. Laurent, Geetak Gupta, Stacia Keller, Edwin Acuna, Donald J. Suntrup, Umesh K. Mishra
Publikováno v:
72nd Device Research Conference.
In conclusion, we show that injection energy and base thickness are the critical parameters for achieving gain in III-N HETs. It is important to make sure that high leakage currents and large base resistance do not result in inaccurate extraction of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9315dacd8732b449e295b2e85ac54353
https://doi.org/10.1109/drc.2014.6872394
https://doi.org/10.1109/drc.2014.6872394
Autor:
Cory Lund, Geetak Gupta, Joseph Nedy, Stacia Keller, Silvia H. Chan, Haoran Li, Umesh K. Mishra, Maher Tahhan
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:031303
The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74cfa92772a79fe1c4a5d51adef01ed3
https://doi.org/10.1116/1.4944054
https://doi.org/10.1116/1.4944054