Zobrazeno 1 - 10
of 676
pro vyhledávání: '"Geelhaar, L"'
Autor:
Zettler, J. K., Hauswald, C., Corfdir, P., Musolino, M., Geelhaar, L., Riechert, H., Brandt, O., Fernández-Garrido, S.
Publikováno v:
Cryst. Growth Des. 2015, 15, 8, 4104
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approa
Externí odkaz:
http://arxiv.org/abs/2402.00583
Autor:
Calabrese, G., van Treeck, D., Kaganer, V. M., Konovalov, O., Corfdir, P., Sinito, C., Geelhaar, L., Brandt, O., Fernández-Garrido, S.
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ra
Externí odkaz:
http://arxiv.org/abs/2002.09702
Autor:
Auzelle, T., Azadmand, M., Flissikowski, T., Ramsteiner, M., Morgenroth, K., Stemmler, C., Fernández-Garrido, S., Sanguinetti, S., Grahn, H. T., Geelhaar, L., Brandt, O.
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at tempe
Externí odkaz:
http://arxiv.org/abs/2001.06387
Autor:
Jaloustre, L., Le-Denmat, S., Auzelle, T., Azadmand, M., Geelhaar, L., Dahlem, F., Songmuang, R.
Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics, demanding well-clarification of their piezoelectric behavior. Despit
Externí odkaz:
http://arxiv.org/abs/1910.01187
Autor:
Sinito, C., Corfdir, P., Pfüller, C., Gao, G., Vílchez, J. Bartolomé, Kölling, S., Doblado, A. Rodil, Jahn, U., Lähnemann, J., Auzelle, T., Zettler, J. K., Flissikowski, T., Koenraad, P., Grahn, H. T., Geelhaar, L., Fernández-Garrido, S., Brandt, O.
Publikováno v:
Nano Letters 19, 5938 (2019)
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the sp
Externí odkaz:
http://arxiv.org/abs/1905.04090
Autor:
Courtade, E., Han, B., Nakhaie, S., Robert, C., Marie, X., Renucci, P., Taniguchi, T., Watanabe, K., Geelhaar, L., Lopes, J. M. J., Urbaszek, B.
Publikováno v:
Appl. Phys. Lett. 113, 032106 (2018)
The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal b
Externí odkaz:
http://arxiv.org/abs/1804.06623
Autor:
Musolino, M., Sacconi, F., Tahraoui, A., Panetta, F., De Santi, C., Meneghini, M., Zanoni, E., Geelhaar, L.
In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relative intensity of the two peaks evolves in a peculiar way with injected c
Externí odkaz:
http://arxiv.org/abs/1704.01569
Autor:
Feix, F., Flissikowski, T., Sabelfeld, K. K., Kaganer, V. M., Wölz, M., Geelhaar, L., Grahn, H. T., Brandt, O.
Publikováno v:
Phys. Rev. Applied 8, 014032 (2017)
We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pu
Externí odkaz:
http://arxiv.org/abs/1703.06715
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Autor:
Corfdir, P., Hauswald, C., Marquardt, O., Flissikowski, T., Zettler, J. K., Fernández-Garrido, S., Geelhaar, L., Grahn, H. T., Brandt, O.
Publikováno v:
Phys. Rev. B 93, 115305 (2016)
We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of s
Externí odkaz:
http://arxiv.org/abs/1601.01162