Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Geedhika K Poduval"'
Autor:
Md. Anower Hossain, Kean Thong Khoo, Xin Cui, Geedhika K Poduval, Tian Zhang, Xiang Li, Wei Min Li, Bram Hoex
Publikováno v:
Nano Materials Science, Vol 2, Iss 3, Pp 204-226 (2020)
Atomic layer deposition (ALD) can synthesise materials with atomic-scale precision. The ability to tune the material composition, film thickness with excellent conformality, allow low-temperature processing, and in-situ real-time monitoring makes thi
Externí odkaz:
https://doaj.org/article/316f259f8e894664837a30eb5ae41c1b
Autor:
Nathan L. Chang, Geedhika K. Poduval, Borong Sang, Kean Khoo, Michael Woodhouse, Fred Qi, Mohammad Dehghanimadvar, Wei Min Li, Renate J. Egan, Bram Hoex
Publikováno v:
Progress in Photovoltaics: Research and Applications. 31:414-428
Publikováno v:
ACS Omega
ACS Omega, Vol 6, Iss 13, Pp 8829-8836 (2021)
ACS Omega, Vol 6, Iss 13, Pp 8829-8836 (2021)
The production of graphene films is of importance for the large-scale application of graphene-based materials; however, there is still a lack of an efficient and effective approach to synthesize graphene films directly on dielectric substrates. Here,
Autor:
Bram Hoex, Geedhika K. Poduval, Wei Min Li, Md. Anower Hossain, Xiang Li, Xin Cui, Kean Thong Khoo, Tian Zhang
Publikováno v:
Nano Materials Science, Vol 2, Iss 3, Pp 204-226 (2020)
Atomic layer deposition (ALD) can synthesise materials with atomic-scale precision. The ability to tune the material composition, film thickness with excellent conformality, allow low-temperature processing, and in-situ real-time monitoring makes thi
Autor:
Md. Anower Hossain, Leiping Duan, Yingping Zou, Borong Sang, Bram Hoex, Geedhika K. Poduval, Yu Zhang, Ashraf Uddin
Publikováno v:
Solar RRL. 4:2000241