Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Gebreselasie Ephrem G"'
Publikováno v:
BCICTS
The temperature and self-heating behavior of multiple ballast resistor devices structure was examined with the observation that a silicided polysilicon resistor sitting on top of thick oxide has greater self-heating characteristics with little heat d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d002dd0fa736f67a68738e3500606e
https://doi.org/10.1109/bcicts45179.2019.8972747
https://doi.org/10.1109/bcicts45179.2019.8972747
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
0.35um SiGe BiCMOS wafers were fabricated using Ti, Co, Pt, and Ni salicide processes optimized for a range of CMOS technology nodes down to 90nm. On-wafer circuitry was used to program discrete eFuse elements to compare their pre and post programmed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855bda742e1489fa05b220ea67aac6b6
https://doi.org/10.1109/asmc.2019.8791749
https://doi.org/10.1109/asmc.2019.8791749
Autor:
Souvick Mitra, You Li, Robert Gauthier, Gebreselasie Ephrem G, Thuy Tran-quinn, Koushik Ramachandran
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:497-503
A set of design of experiments matrix was created to evaluate the possibilities of electrostatic-discharge (ESD) failures during the complex 3-D integration process as a function of the ESD protection level. A detailed set of pass/fail criteria based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74a174edba0e001563e6f799647b249
https://doi.org/10.1109/tdmr.2016.2627522
https://doi.org/10.1109/tdmr.2016.2627522