Zobrazeno 1 - 10
of 2 120
pro vyhledávání: '"Gebhard, F"'
An appropriately parameterized compact analytical equation (APAE) is suggested to account for charge carrier mobility in organic disordered semiconductors (ODSs). This equation correctly reproduces the effects of temperature $T$, carrier concentratio
Externí odkaz:
http://arxiv.org/abs/2311.05406
There are several ways to derive Einstein's celebrated formula for the energy of a massive particle at rest, $E=mc^2$. Noether's theorem applied to the relativistic Lagrange function provides an unambiguous and straightforward access to energy and mo
Externí odkaz:
http://arxiv.org/abs/2308.02612
Autor:
Guillaume Gotthard, Sandra Mous, Tobias Weinert, Raiza Nara Antonelli Maia, Daniel James, Florian Dworkowski, Dardan Gashi, Antonia Furrer, Dmitry Ozerov, Ezequiel Panepucci, Meitian Wang, Gebhard F. X. Schertler, Joachim Heberle, Joerg Standfuss, Przemyslaw Nogly
Publikováno v:
IUCrJ, Vol 11, Iss 5, Pp 792-808 (2024)
Light–oxygen–voltage (LOV) domains are small photosensory flavoprotein modules that allow the conversion of external stimuli (sunlight) into intracellular signals responsible for various cell behaviors (e.g. phototropism and chloroplast relocatio
Externí odkaz:
https://doaj.org/article/0487f96a71db49698c8ff3e32bc949bf
The space- and temperature-dependent electron distribution $n(\mathbf r,T)$ is essential for the theoretical description of the opto-electronic properties of disordered semiconductors. We present two powerful techniques to access $n(\mathbf r,T)$ wit
Externí odkaz:
http://arxiv.org/abs/2212.00643
The current burst in research activities on disordered semiconductors calls for the development of appropriate theoretical tools that reveal the features of electron states in random potentials while avoiding the time-consuming numerical solution of
Externí odkaz:
http://arxiv.org/abs/2212.00633
Autor:
Baranovskii, S. D., Höhbusch, P., Nenashev, A. V., Dvurechenskii, A. V., Gerhard, M., Koch, M., Hertel, D., Meerholz, K., Gebhard, F.
Studying optoelectronic properties in FAPb$_{1-x}$Sn$_x$I$_3$ perovskites as a function of the lead:tin content, Parrott et al. observed the broadest luminescence linewidth and the largest luminescence Stokes shift in mixed compositions with Sn $ < 2
Externí odkaz:
http://arxiv.org/abs/2201.13401
We introduce and study a simplification of the symmetric single-impurity Kondo model. In the Ising-Kondo model, host electrons scatter off a single magnetic impurity at the origin whose spin orientation is dynamically conserved. This reduces the prob
Externí odkaz:
http://arxiv.org/abs/2007.02664
Autor:
Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F., Baranovskii, S. D.
Publikováno v:
Phys. Rev. B 100, 125202 (2019)
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of
Externí odkaz:
http://arxiv.org/abs/1907.05107
Autor:
Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F.
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nat
Externí odkaz:
http://arxiv.org/abs/1907.05113
Autor:
Romantini, Nina, Alam, Shahidul, Dobitz, Stefanie, Spillmann, Martin, De Foresta, Martina, Schibli, Roger, Schertler, Gebhard F. X., Wennemers, Helma, Deupi, Xavier, Behe, Martin, Berger, Philipp
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2021 Nov . 118(48), 1-8.
Externí odkaz:
https://www.jstor.org/stable/27094086