Zobrazeno 1 - 10
of 31
pro vyhledávání: '"GeSiSn"'
Akademický článek
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Publikováno v:
Frontiers in Materials, Vol 7 (2020)
A remote plasma enhanced chemical vapor deposition (CVD) process using GeH4, SiH4, and SnCl4 precursors has been developed for epitaxial growth of group-IV alloys directly on Si (100) substrates, without the need for buffer layers. X-ray diffraction
Externí odkaz:
https://doaj.org/article/7fa9e65356a54fce945e970712fc74f5
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-5 (2018)
Abstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media fo
Externí odkaz:
https://doaj.org/article/c8b42e5b76374c92946dc1344b130a68
Autor:
Vyacheslav Timofeev, Alexandr Nikiforov, Artur Tuktamyshev, Vladimir Mashanov, Michail Yesin, Aleksey Bloshkin
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been
Externí odkaz:
https://doaj.org/article/8c2423975ed248049413341a2dcf51a9
Autor:
Vyacheslav A. Timofeev, Alexandr I. Nikiforov, Artur R. Tuktamyshev, Aleksey A. Bloshkin, Vladimir I. Mashanov, Sergey A. Teys, Ivan D. Loshkarev, Natalia A. Baidakova
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 2, Pp 86-90 (2017)
This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn laye
Externí odkaz:
https://doaj.org/article/fb183be9c0f041b18514110729a4f7a5
Akademický článek
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Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Frontiers in Materials, Vol 7 (2020)
A remote plasma enhanced chemical vapor deposition (CVD) process using GeH4, SiH4, and SnCl4 precursors has been developed for epitaxial growth of group-IV alloys directly on Si (100) substrates, without the need for buffer layers. X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5d197d3fcb40c60a1756f946fd359fd
https://doi.org/10.3389/fmats.2020.00044
https://doi.org/10.3389/fmats.2020.00044
Autor:
Michail Yesin, A. I. Nikiforov, Vyacheslav Timofeev, V. I. Mashanov, A. R. Tuktamyshev, A. A. Bloshkin
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Nanoscale Research Letters
Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Nanoscale Research Letters
Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e58490479052c77243c8e167d8a764cb
http://link.springer.com/article/10.1186/s11671-017-2429-6
http://link.springer.com/article/10.1186/s11671-017-2429-6
Autor:
V. V. Murashov, Vyacheslav Timofeev, A. A. Bloshkin, A. R. Tuktamyshev, A. I. Nikiforov, A. I. Yakimov
Publikováno v:
Semiconductors. 51:329-334
Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4eaebc0381a7680c5623b2a7181404d3
https://doi.org/10.1134/s1063782617030058
https://doi.org/10.1134/s1063782617030058