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Akademický článek

Metrics for Quantification of By-Process Segregation in Ge-Rich GST

Autor: Elisa Petroni, Andrea Serafini, Davide Codegoni, Paolo Targa, Luca Mariani, Mario Scuderi, Giuseppe Nicotra, Andrea Redaelli

Publikováno v: Frontiers in Physics, Vol 10 (2022)

Ge-rich GST alloys are the most promising materials for phase-change memory (PCM) to fulfill the soldering compliance and the tough data retention requirements of automotive applications. Significant efforts have been made to engineer those materials

Externí odkaz: https://doaj.org/article/8e71d3ac0cf247cfa98ec0e820aff8a7

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Akademický článek

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Akademický článek

Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films

Autor: Daniel Tadesse Yimam, A. J. T. Van Der Ree, Omar Abou El Kheir, Jamo Momand, Majid Ahmadi, George Palasantzas, Marco Bernasconi, Bart J. Kooi

Publikováno v: Nanomaterials, Vol 12, Iss 10, p 1717 (2022)

Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb2Te3 tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material w

Externí odkaz: https://doaj.org/article/7ca3cfb644784727ab7b54c76679f89d

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Akademický článek

Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

Publikováno v: Nanomaterials, Vol 12, Iss 8, p 1340 (2022)

In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties a

Externí odkaz: https://doaj.org/article/17cb6adfb4f64be2b0c5701ffca7fd2d

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Raman Thermometry Characterization of GeSbTe based Phase Change Materials

Autor: Akash Patil, Yannick Le-Friec, Jury Sandrini, Roberto Simola, Philippe Boivin, Emmanuel Dubois, Jean-Francois Robillard

Publikováno v: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2022)
28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2022), Sep 2022, Dublin, Ireland. pp.1-5, ⟨10.1109/THERMINIC57263.2022.9950662⟩
2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2022, Dublin, Ireland. pp.1-5, ⟨10.1109/THERMINIC57263.2022.9950662⟩

International audience; Ge-rich GeSbTe N-doped alloys present a solution for the reliability and thermal stability requirements of Phase Change Memories for embedded non-volatile memory automotive applications. The thermal performance of these memori

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad8bd6e2751e381ded48447c9aacb58
https://hal.science/hal-03870575/file/Therminic_article_final.pdf

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Crystallization of Ge-Rich GeSbTe Alloys: The Riddle Is Solved

Autor: Rahier, Eloïse, Ran, Sijia, Ratel Ramond, Nicolas, Ma, Shuangying, Calmels, Lionel, Saha, Sabyasachi, Mocuta, Cristian, Benoit, Daniel, Le Friec, Yannick, Luong, Minh Anh, Claverie, Alain

Publikováno v: ACS Applied Electronic Materials
ACS Applied Electronic Materials, 2022, 4 (6), pp.2682-2688. ⟨10.1021/acsaelm.2c00038⟩

International audience; Among the phase change materials, Ge-rich GeSbTe (GST) alloys are of considerable interest as they offer a much higher thermal stability than their congruent contenders, a desirable characteristic for embedded digital memories

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::51f22ea860df7d4d5e228108d1d487e8
https://hal.science/hal-03854074/file/Manuscript(2).pdf

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