Výsledky vyhledávání - "Ge implantation"

Ion beam synthesis and characterization of Ge nanoparticles in SiO2

Autor: P. Dubček, Uğur Serincan, Zdravko Siketić, Maja Buljan, I. Bogdanović Radović, Rasit Turan, U. V. Desnica, Sigrid Bernstorff

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:843-846

Ge quantum dots embedded in SiO 2 have been obtained by implantation of Ge ions in the 10 16 –10 17 cm −2 dose range, followed by post-implantation annealing in the temperature range T a = 300−1000 °C. Using Rutherford back-scattering, grazing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a429bbb5341fb35d49f0c42f1a9403d6
https://doi.org/10.1016/j.nimb.2006.03.151

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Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 film and subsequent hydrogen transfer of Si layer

Autor: Tyschenko, I. E., Voelskow, M., Cherkov, A. G., Popov, V. P.

Publikováno v: IBMM 08-16th International Conference on Ion Beam Modification of Materials, 31.08.-05.09.2008, Dresden, Germany
Nuclear Instruments and Methods in Physics Research B 267(2009), 1277-1280

Strong decrease in the carrier mobility of the nanometer-thick silicon films imposes a limitation on the application of silicon-on-insulator (SOI) structures in the current silicon planar CMOS technology. The formation of SiGe-heterostructures-on-ins

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4657481cc16353d23776a668081eaef8
https://www.hzdr.de/publications/Publ-11721-1

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Catohodoluminescence Depth Profiling in SiO2:Ge Layers

Autor: Barfels, T., Schmidt, B., Czarnowski, A., Fitting, H.-J.

Publikováno v: Microchim. Acta 139 (2002) 11-16

For investigation of luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy Eo = 2..30 keV. Applying a constant incident power regime (Eo x Io = const), the depth profiles of luminescent ce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::26b2c6425ebf20a730bcde663526e753
https://www.hzdr.de/publications/Publ-5067-1

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Strong visible electroluminescence from Ge- and Sn-implanted silicon dioxide layers

Autor: Wolfgang Skorupa, J. von Borany, H. Fröb, Dietmar Borchert, Lars Rebohle, Thoralf Gebel

Publikováno v: Material Science and Engineering C19 (2001) 373

Silicon-based light emission is a key feature to make a real step into the world of integrated optical systems, laboratory-on-chip applications and high performance optical communication. One of the most promising approaches is ion implantation into

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a03b0c77fb857d71750dfa92f93d387
https://www.hzdr.de/publications/Publ-4059-1

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