Zobrazeno 1 - 10
of 180
pro vyhledávání: '"Gazquez, Jaume"'
Autor:
Singh, Gyanendra, Guzman, Roger, Saïz, Guilhem, Zhou, Wu, Gazquez, Jaume, Fraxedas, Jordi, Masoudinia, Fereshteh, Winkler, Dag, Claeson, Tord, Bergeal, Nicolas, Herranz, Gervasi, Kalaboukhov, Alexei
SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the di
Externí odkaz:
http://arxiv.org/abs/2401.14365
Autor:
Law, Ka Ming, Thind, Arashdeep S., Pendharkar, Mihir, Patel, Sahil J., Phillips, Joshua J., Palmstrom, Chris J., Gazquez, Jaume, Borisevich, Albina, Mishra, Rohan, Hauser, Adam J.
We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveal
Externí odkaz:
http://arxiv.org/abs/2312.15562
Autor:
Sulzbach, Milena Cervo, Tan, Huan, Estandia, Saul, Gazquez, Jaume, Sanchez, Florencio, Fina, Ignasi, Fontcuberta, Josep
Publikováno v:
ACS Appl. Electron. Mater. 2021
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices w
Externí odkaz:
http://arxiv.org/abs/2108.10373
Autor:
Ming Law, Ka, Thind, Arashdeep S., Pendharkar, Mihir, Patel, Sahil J., Phillips, Joshua J., Palmstrom, Chris J., Gazquez, Jaume, Borisevich, Albina, Mishra, Rohan, Hauser, Adam J.
Publikováno v:
In Journal of Magnetism and Magnetic Materials 1 March 2024 593
Autor:
Estandia, Saul, Gazquez, Jaume, Varela, Maria, Dix, Nico, Qian, Mengdi, Solanas, Raul, Fina, Ignasi, Sanchez, Florencio
Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so f
Externí odkaz:
http://arxiv.org/abs/2102.09174
Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon
Autor:
Gomez, Andrés, Vila-Fungueiriño, José Manuel, Jolly, Claire, Garcia-Bermejo, Ricardo, Oró-Solé, Judith, Ferain, Etienne, Mestres, Narcís, Magén, César, Gazquez, Jaume, Rodriguez-Carvajal, Juan, Carretero-Genevrier, Adrián
Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a result, the monolithic integration of these materials into silicon te
Externí odkaz:
http://arxiv.org/abs/2007.03452
Autor:
Sulzbach, Milena Cervo, Estandía, Saúl, Long, Xiao, Lyu, Jike, Dix, Nico, Gàzquez, Jaume, Chisholm, Matthew F., Sánchez, Florencio, Fina, Ignasi, Fontcuberta, Josep
Publikováno v:
Adv. Electron. Mater. 2020, 6, 1900852
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mech
Externí odkaz:
http://arxiv.org/abs/2006.07093
Autor:
Sulzbach, Milena Cervo, Estandía, Saúl, Gàzquez, Jaume, Sánchez, Florencio, Fina, Ignasi, Fontcuberta, Josep
Publikováno v:
Advanced Functional Materials 2020, 2002638
Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelect
Externí odkaz:
http://arxiv.org/abs/2006.07048
Publikováno v:
Nanoscale, 2019, 11, 21275
Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under proper electrostatic and elastic conditions. These polar states m
Externí odkaz:
http://arxiv.org/abs/1911.06075
Autor:
Estandia, Saul, Dix, Nico, Gazquez, Jaume, Fina, Ignasi, Lyu, Jike, Chisholm, Matthew F., Fontcuberta, Josep, Sanchez, Florencio
Publikováno v:
ACS Applied Electronic Materials, 1, 1449 (2019)
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented,
Externí odkaz:
http://arxiv.org/abs/1909.01563