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pro vyhledávání: '"Gavrilov, N."'
Autor:
Boukhvalov, D. W., Zatsepin, D. A., Biryukov, D. Yu., Shchapova, Yu. V., Gavrilov, N. V., Zatsepin, A. F.
Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of first-principle c
Externí odkaz:
http://arxiv.org/abs/2405.18049
Publikováno v:
Solar-Terrestrial Physics, Vol 10, Iss 2, Pp 111-118 (2024)
In this study, we continue a series of works devoted to modeling and studying the sensitivity of global atmospheric dynamic processes to variations in solar emissions during the 11-year solar activity (SA) cycle. We focus on studying the response of
Externí odkaz:
https://doaj.org/article/470b474eb70b49989180017b958cd0f4
The results of fabrication and characterization of atomic structure of nanocrystalline thin layers of Y2O3 in cubic and monoclinic phases is reported. Experimental data demonstrate crystalline ordering in nanocrystalline films with average grain size
Externí odkaz:
http://arxiv.org/abs/2211.16004
Autor:
Gavrilov N. M., Kshevetskii S. P.
Publikováno v:
Solar-Terrestrial Physics, Vol 9, Iss 3, Pp 86-92 (2023)
Considerable attention has recently been paid to the study of so-called “secondary” acoustic-gravity waves (AGWs) that arise as a result of instability and nonlinear interactions of “primary” wave modes propagating from atmospheric sources, a
Externí odkaz:
https://doaj.org/article/b7642ab1ae67455fb44b25735d4434aa
Autor:
Leedahl, B., McCloskey, D. J., Boukhvalov, D. W., Zhidkov, I. S., Kukharenko, A. I., Kurmaev, E. Z., Cholakh, S. O., Gavrilov, N. V., Brinzari, V. I., Moewes, A.
Publikováno v:
Phys. Chem. Chem. Phys., 2019,21, 11992-11998
Directly measuring elementary electronic excitations in dopant $3d$ metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the $3d$ electron band it is shown how transitio
Externí odkaz:
http://arxiv.org/abs/1908.02623
Autor:
Zatsepin, A. F., Zatsepin, D. A., Boukhvalov, D. W., Gavrilov, N. V., Shur, V. Ya., Esin, A. A.
The following scenarios of Re-embedding into SiO2-host by pulsed Re-implantation were derived and discussed after XPS-and-DFT electronic structure qualification: (i) low Re-impurity concentration mode -> the formation of combined substitutional and i
Externí odkaz:
http://arxiv.org/abs/1709.01673
Autor:
Zatsepin, D. A., Boukhvalov, D. W., Kurmaev, E. Z., Zatsepin, A. F., Kim, S. S., Gavrilov, N. V., Zhidkov, I. S.
The over threshold carbon-loadings (~50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (~7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 hour vacuum-idle cycle between sequential stages of embedding. The
Externí odkaz:
http://arxiv.org/abs/1707.05934
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An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA
Externí odkaz:
http://arxiv.org/abs/1607.01470
Autor:
Zatsepin, D. A., Boukhvalov, D. W., Kurmaev, E. Z., Gavrilov, N. V., Kim, S. S., Zhidkov, I. S.
The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-doping of the bulk and thin-film titanium dioxide was made with help of pul
Externí odkaz:
http://arxiv.org/abs/1604.05026