Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Gavin D. R. Hall"'
Autor:
Derryl Allman, Gavin D. R. Hall
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 18:508-519
It is now well accepted that the unbiased isothermal resistance drift and latent open-via failures in Al and Cu metal interconnects is due to the formation and growth of stress induced voids (SIVs). While the basic description of SIV was established
Autor:
J.P. Gambino, Kaitlyn Pabst, B. Greenwood, Konner E. K. Holden, Chris Kendrick, Derryl Allman, Robin Daugherty, Gavin D. R. Hall, Michael Cook
Publikováno v:
IRPS
High-K metal-insulator-metal capacitors are used in many high-performance applications that require both excellent energy storage and minimal energy loss. Often the increase in dielectric permittivity is coupled with an increase in dielectric relaxat
Autor:
Chris Kendrick, Tom Kopley, Osama O. Awadelkarim, S.A. Suliman, Gavin D. R. Hall, Jifa Hao, Michael Cook, Amartya Ghosh
Publikováno v:
IRPS
Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the
Publikováno v:
IRPS
Metal-Insulator-Metal (MIM) capacitors are widely used in More-than-Moore technologies, such as RF devices and image sensors. These technologies typically use SiN for the MIM capacitor dielectric, which has good reliability but a relatively low capac
Autor:
Lieyi Sheng, R.C. Jerome, I. Rahim, D. Price, G. Hosey, H. Truong, J.P. Gambino, B. Riebeek, H. Soleimani, Gavin D. R. Hall
Publikováno v:
IRPS
In this study, device reliability is characterized for two different 0.18 μm backside illumination CMOS image sensor technologies. We show that for devices with an SiO 2 liner over the gates and with SiN backside dielectrics, the backside processing
Autor:
Gavin D. R. Hall, Derryl Allman
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
During High Temperature Storage (HTS), previously failed vias due to open failures from voids subsequently self-heal. Likewise, the resistance shifts appear to saturate and reverse direction over long times. The propensity for self-healing and subseq
Autor:
Ales Litschmann, Gavin D. R. Hall, D. Price, Jiri Slezak, Lancelot Ou, J.P. Gambino, Tracy Myers, Troy Clear
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Parametric device shifts occur in a 0.25 μm CMOS sense amp circuit during a High Temperature Operation Life (HTOL) test, due to the positive bias stress on the pMOSFET devices. The positive gate bias from the HTOL stress causes a larger negative shi
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
This work describes the improvement in reliability of a trench MOSFET through modification of the cobalt silicide module. Integration options explored are; (a) use of a nitride spacer, and (b) use of TiN cap during the salicidation process. WLR metho
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Stress induced void (SIV) nucleation and growth is studied using phenomenological creep models and used to predict failure rates in Cu/low-k via chains from a 110nm process. It is argued that the void formation is induced at grain-boundaries, triple-
Autor:
M. S. Fairbanks, D. Jonas, T. P. Martin, Richard J. K. Taylor, Gavin D. R. Hall, B. C. Scannell, R. Guzman, C. A. Marlow, Adam P. Micolich
Publikováno v:
Pattern Recognition Letters. 28:695-702
Jackson Pollock's paintings are currently valued up to US$75M, triggering discussions that attributation procedures featuring subjective visual assessments should be complimented by quantitative scientific procedures. We present a fractal analysis of