Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Gavin C. H. Zau"'
Autor:
Gavin C. H. Zau, Herbert H. Sawin
Publikováno v:
Journal of The Electrochemical Society. 139:250-256
The effect of low level, between 0.001 and 10%, addition on based plasma etching of polysilicon in a parallel‐plate etcher was investigated. Three strong effects on the etching rate of unmasked polysilicon were observed. Low level addition, 0.1–2
Autor:
Herbert H. Sawin, Linda D. Baston, Gavin C. H. Zau, Igor Tepermeister, Michael T. Mocella, David C. Gray
Publikováno v:
Journal of The Electrochemical Society. 137:3526-3536
Publikováno v:
Journal of The Electrochemical Society. 138:872-873