Defects evolution and dopant activation anomalies in ion implanted silicon

Autor: Cristiano, F., Lamrani, Y., Severac, F., Gavelle, M., Boninelli, S., Cherkashin, N., Marcelot, O., Claverie, A., Lerch, W., Paul, S., Cowern, N.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, B December 2006 253(1-2):68-79

Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading.

Autor: Marcault, E., Tremouilles, D., Isoird, K., Morancho, F., Gavelle, M.

Publikováno v: 2016 18th European Conference on Power Electronics & Applications (EPE'16 ECCE Europe); 2016, p1-6, 6p

Influence of border traps on the determination of the minimum temperature coefficient current in high sensitivity MOS radiation dosimeters.

Autor: Sarrabayrouse, G., Gavelle, M., Siskos, S.

Publikováno v: 2009 3rd International Conference on Signals, Circuits & Systems (SCS); 2009, p1-5, 5p

Defect evolution after germanium preamorphization in silicon on insulator structures.

Autor: Fazzini, P. F., Cristiano, F., Dupré, C., Claverie, A., Ernst, T., Gavelle, M.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jan/Feb2008, Vol. 26 Issue 1, p342-346, 5p, 3 Diagrams, 3 Graphs

Iron/photoredox dual-catalyzed redox-neutral double decarboxylative C(sp³)–C(sp³) cross-coupling.

Autor: Zhang, Qi, Wu, Shanghui, Wu, Xuesong

Publikováno v: Green Chemistry; 11/21/2024, Vol. 26 Issue 22, p11334-11339, 6p