Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gautham Rangasamy"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 8-12 (2024)
We systematically fabricate devices and analyze data for vertical InAs/(In)GaAsSb nanowire tunnel field-effect transistors (TFETs), to study the influence of source dopant position and level on their device performance. The results show that delaying
Externí odkaz:
https://doaj.org/article/a408c070e7b04b6c926ef356cd5dd6b0
Publikováno v:
Electronics Letters, Vol 59, Iss 18, Pp n/a-n/a (2023)
Abstract Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance
Externí odkaz:
https://doaj.org/article/b05bec842d5749bf81f204179803a597
Publikováno v:
IEEE Access, Vol 11, Pp 95692-95696 (2023)
We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of $1.2~\mu \text{A}/\mu \text{m}$ , paving the way for low power applications. The transistor
Externí odkaz:
https://doaj.org/article/89fb3b23368246b29bd3d1a5388c62aa
Publikováno v:
IEEE Electron Device Letters. :1-1