Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Gautam Gaddemane"'
Autor:
Mohammad Mahdi Khatami, Gautam Gaddemane, Maarten L. Van de Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, William G. Vandenberghe
Publikováno v:
Materials, Vol 12, Iss 18, p 2935 (2019)
Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes i
Externí odkaz:
https://doaj.org/article/65e5ec99c18a4e19b710114a7b5c68d3
Autor:
Massimo Fischetti, Gautam Gaddemane, Sanjay Gopalan, Maarten Ludo Van de Put, William Vandenberghe
Publikováno v:
ECS Transactions. 111:81-91
The search for alternatives to Si in the VLSI technology is based on experimental and theoretical work. Here, we consider only the latter and, looking at a few two-dimensional materials of current interest, we use them as examples to emphasize the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3179124941e025f80ee4ce8b979df981
https://doi.org/10.1149/11101.0081ecst
https://doi.org/10.1149/11101.0081ecst
Publikováno v:
Physical Review Applied. 18
We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the low-field carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8429d6d3914d5add0bf8f42df25d57c2
https://doi.org/10.1103/physrevapplied.18.054062
https://doi.org/10.1103/physrevapplied.18.054062
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce5a3f56da79699078cb5e6f36f590c7
https://doi.org/10.1007/978-3-030-79827-7_42
https://doi.org/10.1007/978-3-030-79827-7_42
Autor:
Gautam Gaddemane, Krishna K. Bhuwalka, Philippe Matagne, Gerhard Rzepa, Maarten Van de Put, Sybren Santermans, Oskar Baumgartner, Hao Wu, Geert Hellings
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d066442f1626bf897b938ed1cb26041
https://doi.org/10.1109/essderc55479.2022.9947139
https://doi.org/10.1109/essderc55479.2022.9947139
Autor:
Edward Chen, William G. Vandenberghe, Gautam Gaddemane, Maarten L. Van de Put, Massimo V. Fischetti
Publikováno v:
Journal of Computational Electronics. 20:60-69
Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of the theoretical studies performed to screen these materials are limited to the room-temperature carrier-mobility in the free standing 2D layers. With th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efeeee808528d4a28ea396ed78981f1d
https://doi.org/10.1007/s10825-020-01610-6
https://doi.org/10.1007/s10825-020-01610-6
Publikováno v:
Journal of Computational Electronics. 20:49-59
Over the last few years, ab initio methods have become an increasingly popular tool to evaluate intrinsic carrier transport properties in 2D semiconductors. The lack of experimental information, and the progress made in the development of DFT tools t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed473ba690a4cf3aa16e8c15b8449d4f
https://doi.org/10.1007/s10825-020-01526-1
https://doi.org/10.1007/s10825-020-01526-1
Autor:
Rutger Duflou, Gautam Gaddemane, Kiroubanand Sankaran, Michel Houssa, Geoffrey Pourtois, Aryan Afzalian
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
For the last 15 years, two-dimensional (2D) materials are being actively studied as a possible replacement for silicon. Due to their layered nature, the materials can be scaled down to a single atomic layer, favouring extreme device scaling. In addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3d5c7b4c1dfabff6a4a6f11d2f1e202
https://doi.org/10.1109/sispad54002.2021.9592532
https://doi.org/10.1109/sispad54002.2021.9592532
Autor:
William G. Vandenberghe, Gautam Gaddemane, Shanmeng Chen, Sanjay Gopalan, Massimo V. Fischetti, M. L. Van de Put
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Given the present interest of the VLSI industry on two-dimensional materials, theoretical studies of their charge-transport properties may help us to identify the most promising materials and device structures. Here we focus on three main problems th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a55b3d3ece77f8be7d77f1a27e719f
https://doi.org/10.1109/vlsi-tsa51926.2021.9440113
https://doi.org/10.1109/vlsi-tsa51926.2021.9440113
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Monolayer SnSe is a two-dimensional (2D) material with an indirect band gap ($\sim$ 0.92 eV) that can be obtained relatively easily by exfoliating bulk SnSe crystals. Like most 2D van der Waals monolayers, its layered nature reduces or eliminates the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e1f277ff4788eb9090f1a79c6f27cd3
https://doi.org/10.23919/sispad49475.2020.9241611
https://doi.org/10.23919/sispad49475.2020.9241611