In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Autor: Ji, B. L., Li, H., Ye, Q., Gausepohl, S., Deora, S., Veksler, D., Vivekanand, S., Chong, H., Stamper, H., Burroughs, T., Johnson, C., Smalley, M., Bennett, S., Kaushik, V., Piccirillo, J., Rodgers, M., Passaro, M., Liehr, M.

Publikováno v: 2015 IEEE International Memory Workshop(IMW), 17-20 May 2015 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7150290&isnumber=7150256

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-r

Externí odkaz: http://arxiv.org/abs/1509.00070

Effect of Lattice Strain on Growth Mechanisms and Electrical Transport Behavior of Epitaxial CaRuO3 Thin Films.

Autor: Eom, C. B., Rao, R. A., Gan, Q., Cava, R. J., Krajewski, J. J., Suzuki, Y., Gausepohl, S. C., Lee, M.

Publikováno v: MRS Online Proceedings Library; 1997, Vol. 474 Issue 1, p199-204, 6p

Impact of thermal budget on dopant-segregated (DS) metal S/D gate-all-around (GAA) PFETs.

Autor: Akarvardar, K., Rodgers, M., Kaushik, V., Johnson, C.S., Ok, I., Ang, K.-W., Stamper, H., Bennett, S., Franca, D., Rao, M., Gausepohl, S., Hobbs, C., Kirsch, P., Jammy, R.

Publikováno v: Proceedings of Technical Program of 2012 VLSI Technology, System & Application; 1/ 1/2012, p1-2, 2p

FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface.

Autor: Kenney, C.R., Ang, K.-W., Matthews, K., Liehr, M., Minakais, M., Pater, J., Rodgers, M., Kaushik, V., Novak, S., Gausepohl, S., Hobbs, C., Kirsch, P. D., Jammy, R.

Publikováno v: 2012 Symposium on VLSI Technology (VLSIT); 1/ 1/2012, p17-18, 2p

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