Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Gauja, E."'
Publikováno v:
Thin Solid Films 518 (2010) 2524-2527
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealin
Externí odkaz:
http://arxiv.org/abs/1002.4934
Near-field enhanced, nano-Raman spectroscopy has been successfully used to probe the surface chemistry of silicon prepared using standard wafer cleaning and processing techniques. The results demonstrate the utility of this measurement for probing th
Externí odkaz:
http://arxiv.org/abs/1002.2692
Autor:
Mitic, M., Petersson, K. D., Cassidy, M. C., Starrett, R. P., Gauja, E., Ferguson, A. J., Yang, C., Jamieson, D. N., Clark, R. G., Dzurak, A. S.
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator
Externí odkaz:
http://arxiv.org/abs/0802.0375
Autor:
Dzurak, A. S., Hollenberg, L. C. L., Jamieson, D. N., Stanley, F. E., Yang, C., Buhler, T. M., Chan, V., Reilly, D. J., Wellard, C., Hamilton, A. R., Pakes, C. I., Ferguson, A. G., Gauja, E., Prawer, S., Milburn, G. J., Clark, R. G.
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306265
Autor:
Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 2003 Jul . 361(1808), 1451-1471.
Externí odkaz:
https://www.jstor.org/stable/3559252
Autor:
Jamieson, D.N., Chan, V., Hudson, F.E., Andresen, S.E., Yang, C., Hopf, T., Hearne, S.M., Pakes, C.I., Prawer, S., Gauja, E., Dzurak, A.S., Clark, R.G.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B August 2006 249(1-2):221-225
Autor:
Hopf, T., Jamieson, D.N., Hearne, S.M., Yang, C., Pakes, C.I., Dzurak, A.S., Gauja, E., Clark, R.G.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B April 2005 231(1-4):463-466
Autor:
Mitic, M., Andresen, S.E., Yang, C., Hopf, T., Chan, V., Gauja, E., Hudson, F.E., Buehler, T.M., Brenner, R., Ferguson, A.J., Pakes, C.I., Hearne, S.M., Tamanyan, G., Reilly, D.J., Hamilton, A.R., Jamieson, D.N., Dzurak, A.S., Clark, R.G.
Publikováno v:
In Microelectronic Engineering 2005 78:279-286
Akademický článek
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Publikováno v:
2010 International Conference on Nanoscience & Nanotechnology (ICONN); 2010, p333-336, 4p