Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Autor: Helmut Jung, Sara Martin-Horcajo, Hervé Blanck, Martin Kuball, Benoit Lambert, James W Pomeroy

Publikováno v: Martin Horcajo, S, Pomeroy, J, Lambert, B, Jung, H, Blanck, H & Kuball, M 2016, ' Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs ', IEEE Electron Device Letters, vol. 37, no. 9, pp. 1197-1200 . https://doi.org/10.1109/LED.2016.2595400

An experimental method to measure the gate metal temperature of GaN-based high electron mobility transistors is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermorefl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c404f1e5a0f3dea81ee0da73fbb15be
https://doi.org/10.1109/led.2016.2595400