Zobrazeno 1 - 10
of 1 517
pro vyhledávání: '"Gate leakage"'
Autor:
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the o
Externí odkaz:
https://doaj.org/article/15a4697f89804f29a689c0c64e591d90
Autor:
Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo
Publikováno v:
IEEE Access, Vol 12, Pp 35410-35416 (2024)
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance ( $\
Externí odkaz:
https://doaj.org/article/5e137cc1f052421786d1919f9d516eda
Akademický článek
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Autor:
Ruipeng Lv, Huiqin Sun, Longfei Yang, Zhen Liu, Yuanhao Zhang, Yuan Li, Yong Huang, Zhiyou Guo
Publikováno v:
Results in Physics, Vol 59, Iss , Pp 107526- (2024)
This article demonstrates the effect of reverse gradient barrier layer and floating gate structure on DC and RF performance of GaN-based HEMTs. In terms of power characteristics, using reverse gradient barrier and floating gate, the GaN-HEMTs with Lg
Externí odkaz:
https://doaj.org/article/d69fa3102cf24b35b4066813bde57934
Publikováno v:
Micromachines, Vol 15, Iss 4, p 517 (2024)
This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the max
Externí odkaz:
https://doaj.org/article/41359acb07fa461a8455ab71c1169c8a
Publikováno v:
Alexandria Engineering Journal, Vol 72, Iss , Pp 169-180 (2023)
Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace conventional MOSFETs in low-power applications. However, there are many challenges that should be overcome to efficiently operate the TFET. One of the most limiting factor
Externí odkaz:
https://doaj.org/article/f025cac206c042df9eb3d562f8b621b7
Autor:
Alan Otero-Carrascal, Dora Chaparro-Ortiz, Purushothaman Srinivasan, Oscar Huerta, Edmundo Gutiérrez-Domínguez, Reydezel Torres-Torres
Publikováno v:
Micromachines, Vol 15, Iss 2, p 252 (2024)
Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF is analyze
Externí odkaz:
https://doaj.org/article/a5d4baa581cf400899f75e7c6b4c8d95
Publikováno v:
Ain Shams Engineering Journal, Vol 14, Iss 4, Pp 101917- (2023)
The aim of this study was to virtual fabricate and characterize a Floating-gate MOS transistor of the 65 nm process. The fabrication process was designed and characterized using the TCAD Silvaco tools. In our work, a detailed flow and the parameters
Externí odkaz:
https://doaj.org/article/5023e4eeaebc412c8eb35bddc6faf8e3
Akademický článek
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