Zobrazeno 1 - 10
of 1 366
pro vyhledávání: '"Gate control"'
Autor:
Leung, Dara Kiu Yi, Fong, Annabelle Pui Chi, Wong, Frankie Ho Chun, Liu, Tianyin, Wong, Gloria Hoi Yan, Lum, Terry Yat Sang
Publikováno v:
Gerontologist; Jun2024, Vol. 64 Issue 6, p1-12, 12p
Publikováno v:
Energy Informatics, Vol 7, Iss 1, Pp 1-18 (2024)
Abstract Non intrusive load monitoring belongs to the key technologies of intelligent power management systems, playing a crucial role in smart grids. To achieve accurate identification and prediction of electricity load, intelligent optimization alg
Externí odkaz:
https://doaj.org/article/763b268f5b78492ca1441c4527da11d1
Publikováno v:
International Journal of Athletic Therapy & Training; May2024, Vol. 29 Issue 3, p119-122, 4p
Autor:
Palamar, Joseph J.1,2 (AUTHOR) joseph.palamar@nyumc.org, Acosta, Patricia1 (AUTHOR), Calderón, Fermín Fernández3 (AUTHOR), Sherman, Scott1,2 (AUTHOR), Cleland, Charles M.2,4 (AUTHOR)
Publikováno v:
American Journal of Drug & Alcohol Abuse. Sep2017, Vol. 43 Issue 5, p609-617. 9p.
Publikováno v:
Sensors, Vol 24, Iss 13, p 4425 (2024)
To address the issues of sluggish response and inadequate precision in traditional gate opening control systems, this study presents a novel approach for direct current (DC) motor control utilizing an enhanced beetle antennae search (BAS) algorithm t
Externí odkaz:
https://doaj.org/article/bf044cd03a1d4f3880b8be8ddb17b924
Autor:
Eilenberg, Jenna Sandler, author, Otis, John D., author
Publikováno v:
Applications of the Unified Protocol in Health Conditions, 2023.
Externí odkaz:
https://doi.org/10.1093/oso/9780197564295.003.0006
Akademický článek
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Publikováno v:
Frontiers in Neurorobotics, Vol 17 (2023)
As a type of biometric recognition, palmprint recognition uses unique discriminative features on the palm of a person to identify his/her identity. It has attracted much attention because of its advantages of contactlessness, stability, and security.
Externí odkaz:
https://doaj.org/article/35a407104752457eb4e36f3e62eb809a
Publikováno v:
He jishu, Vol 45, Iss 5, Pp 49-54 (2022)
BackgroundTotal dose effect of silicon-on-insulator (SOI) devices can be reinforced through the back gate port, hence the device parameter degradation caused by irradiation can be compensated by applying back-gate bias voltage using the positive back
Externí odkaz:
https://doaj.org/article/52b44d7ba260482cb8d46c03d0587b17
Autor:
Ren, Yu1, Yang, Xu1, Zhang, Fan1, Wang, Kangping1, Chen, Wenjie1, Wang, Laili1, Pei, Yunqing1
Publikováno v:
IEEE Transactions on Industrial Electronics. Oct2017, Vol. 64 Issue 10, p8299-8309. 11p.