Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gate Injection Transistors - GIT"'
Autor:
Gaudenzio Meneghesso, Tetsuzo Ueda, Tsuneo Tanaka, Enrico Zanoni, Daisuke Ueda, Matteo Meneghini, C. De Santi
Publikováno v:
IEEE Electron Device Letters. 33:375-377
This letter describes an extensive analysis of the time- and field-dependent trapping processes that occur in GaN-based gate injection transistors exposed to high drain voltage levels. Results indicate that-even if the devices do not suffer from curr
Autor:
Enrico Zanoni, Matteo Meneghini, Hidetoshi Ishida, Gaudenzio Meneghesso, Tetsuzo Ueda, C. De Santi
With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72ca75c3e120bd769d24405d090162f9
http://hdl.handle.net/11577/3065512
http://hdl.handle.net/11577/3065512
Autor:
matteo meneghini, Carlo De Santi, Ueda, T., Tanaka, T., Ueda, D., Gaudenzio Meneghesso, ENRICO ZANONI
Publikováno v:
Università degli Studi di Padova-IRIS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a17fbb9c4519778dc7956c755f5e75ad
http://hdl.handle.net/11577/2478104
http://hdl.handle.net/11577/2478104
Autor:
Tetsuzo Ueda, M. Scamperle, Enrico Zanoni, Tsuneo Tanaka, Manfredo Manfredi, Maura Pavesi, Gaudenzio Meneghesso, Daisuke Ueda, Matteo Meneghini, Hidetoshi Ishida
This paper reports an extensive investigation of the luminescence processes in GaN-based gate injection transistors (GITs). The results of the analysis indicate that: (i) GITs operating in on-state conditions can emit a weak luminescence signal; (ii)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2da1256b5826f188578c14769c1d3620
http://hdl.handle.net/11577/2446619
http://hdl.handle.net/11577/2446619