Výsledky vyhledávání - "Gasseling, T."

Applications of micro and nano technologies to reconfigurable microwave components

Autor: Blondy, P., Aurelian Crunteanu, Pothier, A., Neveu, G., Dussauby, M. P., Rebernak, W., Gatard, E., Gasseling, T.

Publikováno v: The Asia Pacific Microwave Conference-APMC 2011
The Asia Pacific Microwave Conference-APMC 2011, Dec 2011, Melbourne Victoria, Australia. pp.Présentation invitée TU1S-01
Scopus-Elsevier

International audience; La technologie MEMS pour les applications hyperfréquences, s'est développée depuis quelques années avec pour objectif d'améliorer les performances des circuits et dispositifs microondes. De nombreux composants ont été d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::88d7cdba8352a802caa43ee325b954bd
https://hal.archives-ouvertes.fr/hal-00683420

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Spaceborne L Band High Efficiency 65W SSPA Demonstrator for Navigation and Radar Applications

Autor: Villemazet, J.F., Drevon, C., Cazaux, J.L., Gallou, N. Le, Favede, L., Massiot, M., Rochette, S., Villemazet, J. F, Plaza, A., Vendier, O., Drevon, A., Fellon, P., Sommet, R., Gasseling, T., Charbonniaud, C.

Publikováno v: ESA Microwave Technology and Techniques Workshop
ESA Microwave Technology and Techniques Workshop, 2008, Amsterdam, Netherlands

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::80ede10c67d63458f393959449c1af69
https://hal.archives-ouvertes.fr/hal-02359117

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Conference

VNA Based Measurements and Nonlinear Modeling for Efficient RF Circuit Design.

Autor: Dellier, S., Xiong, A., Charbonniaud, C., Maziere, C., Enguehard, C., Gasseling, T.

Publikováno v: 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2016, p1-4, 4p

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Déphaseur MEMS 2 bits en bande Ka pour les applications de moyenne puissance

Autor: Blondy, Pierre, Palego, Cristiano, Crunteanu, Aurelian, Pothier, Arnaud, Gasseling, T., Champeaux, Corinne, Tristant, Pascal, Catherinot, Alain

Publikováno v: XVèmes Journées Nationales Micro-Ondes
XVèmes Journées Nationales Micro-Ondes, May 2007, Toulouse, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5493f99a999f4d97052242cae048177b
https://hal.archives-ouvertes.fr/hal-00285904

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Hot small-signal S-parameter measurements of power transistors operating under large-signal condition in a load-pull environment for the study of nonlinear parametric interactions

Autor: Gasseling, T., Barataud, Denis, Mons, Sébastien, Nebus, Jean-Michel, Villotte, Jean-Pierre, Obregon, Juan, Quéré, Raymond

Publikováno v: IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2004, 52 (3), pp.805-812. ⟨10.1109/TMTT.2004.823528⟩

International audience; This paper presents a setup that enables wide-band (in-band and out-of-band) measurements of hot small-signal S-parameters of nonlinear devices driven by a large-signal single tone (namely, the pump signal). A load-pull charac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4b9cb0c96c9b1b4085875fa101339cbd
https://hal-unilim.archives-ouvertes.fr/hal-01287616

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Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements

Autor: Charbonniaud, C., Gasseling, T., De Meyer, S., Quéré, R., Teyssier, J.P., Barataud, D., Nébus, J.M, Martin, T., Grimbert, B., Hoel, V., Caillas, N., Morvan, E.

Publikováno v: Charbonniaud, C. ; Gasseling, T. ; De Meyer, S. ; Quéré, R. ; Teyssier, J.P. ; Barataud, D. ; Nébus, J.M ; Martin, T. ; Grimbert, B. ; Hoel, V. ; Caillas, N. ; Morvan, E. (2004) Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

A systematic evaluation of power performances of AlGaN/GaN HEMTs has been performed by means of CW on wafer Load Pull measurements at X band. Those measurements have been correlated to the results obtained through I-V and S-parameters pulsed measurem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::176c33c5e9653fbdd871b66ea460f304

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Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity

Autor: Forestier, S., Gasseling, T., Bouysse, P., Barataud, D., Quere, R., Nebus, J.M.

Publikováno v: Forestier, S. ; Gasseling, T. ; Bouysse, P. ; Barataud, D. ; Quere, R. ; Nebus, J.M. (2003) Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

This paper presents a theoretical and experimental analysis of the phase conversion phenomena in a power PHEMT transistor. Relationships between the linearity of the device and the intrinsic gate-source capacitance CGS, gate-drain capacitance CGD ,tr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9fc5d30b9d91b9d5aa4a42dfe7d77a1

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