Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Gas immersion laser doping"'
This chapter is devoted to the application of nanosecond laser annealing to the realization of superconducting silicon layers and quantum devices. Though predicted since more than 50 years, superconducting behavior in highly boron-doped Si was only d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bce467d3cef5e712da91a0221a351eb
https://doi.org/10.1016/b978-0-12-820255-5.00009-x
https://doi.org/10.1016/b978-0-12-820255-5.00009-x
Autor:
Dominique Débarre, L. Barast, Alexei D. Chepelianskii, Sam L. Bayliss, F. Chiodi, Richard H. Friend, Hélène Bouchiat
Publikováno v:
Nature Communications
Nature Communications, Nature Publishing Group, 2018, 9 (1), ⟨10.1038/s41467-017-02804-6⟩
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Nature Communications, Nature Publishing Group, 2018, 9 (1), ⟨10.1038/s41467-017-02804-6⟩
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
In weakly spin–orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, e.g. on the electro-luminescence of molecular semiconductors. Although silicon has weak spin–orbit coupling, observi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dcc61653958d1ecb17bd8ab7bfa874af
https://hal.archives-ouvertes.fr/hal-02399933
https://hal.archives-ouvertes.fr/hal-02399933
Autor:
Dominique Débarre, Thierry Klein, F. Chiodi, Christophe Marcenat, J. E. Duvauchelle, Audrey Grockowiak, Frédéric Fossard, F. Lefloch
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2014, 302, pp.209-212. ⟨10.1016/j.apsusc.2013.10.101⟩
Applied Surface Science, 2014, 302, pp.209-212. ⟨10.1016/j.apsusc.2013.10.101⟩
Applied Surface Science, Elsevier, 2014, 302, pp.209-212. ⟨10.1016/j.apsusc.2013.10.101⟩
Applied Surface Science, 2014, 302, pp.209-212. ⟨10.1016/j.apsusc.2013.10.101⟩
We have conceived and fabricated Superconductor/Normal metal/Superconductor Josephson junctions made entirely of boron doped Silicon. We have used Gas Immersion Laser Doping to fabricate SN bilayers with good ohmic interfaces and well controlled conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78314cbe9edb726ea934fcce73fb832a
https://doi.org/10.1016/j.apsusc.2013.10.101
https://doi.org/10.1016/j.apsusc.2013.10.101
Publikováno v:
Applied Surface Science. 258:9228-9232
We have probed the dopant activity of silicon B-doped by Gas Immersion Laser Doping (GILD). Here, we report on the comparison of optical, electrical and structural properties of Si:B, over a wide concentration range, up to 1.5 × 10 21 cm −3 by ste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca512cdc736dd998882981b803e9bfbc
https://doi.org/10.1016/j.apsusc.2011.10.077
https://doi.org/10.1016/j.apsusc.2011.10.077
Publikováno v:
physica status solidi c. 8:915-918
We report on the synthesis of SiGe layers on silicon by using a pulsed laser processing technique (Gas Immersion Laser Doping) where GeCl4 gas molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b96d3310250d9b9d4d2a4078e83ae748
https://doi.org/10.1002/pssc.201000345
https://doi.org/10.1002/pssc.201000345
Autor:
J.C. Dupuy, G. Prudon, Thierry Kociniewski, C. Dubois, Bruno Canut, Brice Gautier, Yann Le Gall
Publikováno v:
Surface and Interface Analysis. 43:36-40
This work extends the Isotopic Comparative Method, which has been previously introduced with the aim of correcting matrix effects, to quantify high concentrations of boron in silicon up to 40 at.% by SIMS technique. It requires a specific sample cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7355f942930a4fae5da84c8316d3c7d4
https://doi.org/10.1002/sia.3629
https://doi.org/10.1002/sia.3629
Autor:
Klaus Hasselbach, Dominique Débarre, J. E. Duvauchelle, Christophe Marcenat, John R. Kirtley, F. Chiodi, Anaïs Francheteau, F. Lefloch
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩
Applied Physics Letters, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩
Applied Physics Letters, American Institute of Physics, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩
Applied Physics Letters, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩
We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d34663126299a04192a8b844e3e280da
https://hal.archives-ouvertes.fr/hal-01590246
https://hal.archives-ouvertes.fr/hal-01590246
Autor:
Dominique Débarre, G. Kerrien, Jacques Boulmer, Kuniyuki Kakushima, C. Laviron, M. Hernandez, Thierry Sarnet, Alain Bosseboeuf, Nourdin Yaakoubi, Elisabeth Dufour-Gergam, Tarik Bourouina, J. Venturini
Publikováno v:
Applied Surface Science. 247:537-544
The future CMOS generations for microelectronics will require advanced doping techniques capable to realize ultra-shallow, highly-doped junctions with abrupt profiles. Recent experiments have shown the potential capabilities of laser processing of Ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e67293178df8972e00aeb0c363080f8c
https://doi.org/10.1016/j.apsusc.2005.01.172
https://doi.org/10.1016/j.apsusc.2005.01.172
Publikováno v:
Thin Solid Films. :106-109
Gas immersion laser doping (GILD) is a very attractive technique to realize the ultra-shallow and highly doped junctions required by the International Technology Roadmap for Semiconductors (ITRS) for future CMOS technologies. In the present work, gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b759b2ee7df4e61115fa464cf6409dbf
https://doi.org/10.1016/j.tsf.2003.11.151
https://doi.org/10.1016/j.tsf.2003.11.151
Publikováno v:
Applied Surface Science. 186:45-51
Laser-induced boron doping of silicon, in a special configuration where the precursor gas (BCl3) is injected and chemisorbed on the Si surface prior to each laser pulse, is shown to be a very attractive technique capable to meet the International Tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9776265190e8394e743a5cce2acf0a
https://doi.org/10.1016/s0169-4332(01)00623-7
https://doi.org/10.1016/s0169-4332(01)00623-7