Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gary R. Mount"'
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:428
As implant energies get lower and lower, significant errors can be present in junction depth measurements in secondary ion mass spectrometry (SIMS) ultrashallow depth profiling. Primary beam ion mixing is one of the main sources of errors leading to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::decde90256c480c67097c695310fcbfd
https://doi.org/10.1116/1.2132319
https://doi.org/10.1116/1.2132319
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2345
The need to measure depth profiles of ultralow energy (ULE) ion implants in silicon, required for ⩽180 nm IC device technology, has placed unprecedented requirements of high depth resolution and depth accuracy for the technique of secondary ion mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4837bcd29ee011618cb1ea8850ba5635
https://doi.org/10.1116/1.590916
https://doi.org/10.1116/1.590916
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:3099
A sample of low-temperature epitaxial Si grown with five B delta-doped layers 5.4 nm apart has been profiled using secondary ion mass spectrometry under a variety of O2 bombardment conditions. Energies from 400 eV to 1.5 keV were used with angles of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8b4345632524b6963e49b52b9ce174
https://doi.org/10.1116/1.590370
https://doi.org/10.1116/1.590370
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