Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Gary Mandrusiak"'
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:768-778
The advancements in wide-bandgap devices are enabling applications of power electronic converters coupled directly with medium-voltage (MV) grids that incorporate galvanic isolation within the converter using high-frequency solid-state transformers (
Publikováno v:
IEEE Transactions on Industry Applications. 55:1795-1806
To accelerate wide industry adoption of Silicon Carbide (SiC) based technology, a three-phase two-level inverter based power block is designed with the latest generation high performance 1.7 kV/450 A SiC- mosfet module from General Electric. The desi
Autor:
Gary Mandrusiak, Jian Dai, Rajib Datta, Tony Frangieh, Maja Harfman Todorovic, Brian Lynn Rowden, Philip Michael Cioffi, Frank Jakob John Mueller, Xu She
Publikováno v:
IEEE Transactions on Industry Applications. 53:3738-3747
Silicone carbide (SiC) power devices have been optimized in performance over the past decade. However, wide industry adoption of SiC technology still faces challenges from system design perspective. This paper demonstrates an integrated air-cooled th
Publikováno v:
2018 AIAA/IEEE Electric Aircraft Technologies Symposium.
Hybrid-electric propulsion system is an enabling technology to make the aircrafts more fuel-saving, quieter, and lower carbide emission. In this paper, a megawatt-scale power converter based on a hybrid three-level active neutral-point-clamped (3L-AN
Publikováno v:
2017 IEEE Energy Conversion Congress and Exposition (ECCE).
A three phase power block based on novel 1.7 kV/450 A SiC-MOSFET is designed and tested. To benchmark the performance of the power block, a through comparison is done with currently standardized 1.7 kV/450 A Si-IGBT based three phase power block. Key
Autor:
Philip Michael Cioffi, Xu She, Frank Jakob John Mueller, Tony Frangieh, Jian Dai, Rajib Datta, Brian Lynn Rowden, Gary Mandrusiak, Maja Harfman Todorovich
Publikováno v:
2016 IEEE Energy Conversion Congress and Exposition (ECCE).
SiC power devices have been optimized in performance over the past decade. However, wide industry adoption of SiC technology still faces challenges from system design perspective. This paper demonstrates an integrated air-cooled three phase SiC power
Autor:
Benjamin Poust, Thomas J. Dusseault, Monte Watanabe, Gary Mandrusiak, Vincent Gambin, David Lin, Dino Ferizovic
Publikováno v:
2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
This paper describes engineering analysis and experimental evaluations used to design an innovative imbedded cooling concept for RF thermal management. The concept, called Impingement Cooled Embedded Diamond (ICED), uses liquid flowing through diamon
Publikováno v:
IEEE Transactions on Power Electronics. 33:9783
The transient performance of power semiconductor devices relates directly to their available power rating, reliability, and operating lifetime. This paper examines the transient thermal performance of liquid-cooled, silicon carbide power devices subj
Autor:
Robert Davis, Joleyn E. Brewer, Haldane S. Henry, Stanton Earl Weaver, Ramakrishna Vetury, Gary Mandrusiak, Oliver Charles Boomhower, Nannan Chen
Publikováno v:
Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
This paper describes a convection-based alternative to conduction heat spreaders that uses liquid microchannels to remove heat directly from the transistors. The concept connects microchannels etched directly into the die with a hydraulic circuit tha
Autor:
Gary Mandrusiak, Stanton Earl Weaver, Eric Ayres Browne, David Lin, Oliver Charles Boomhower, Ramakrishna Vetury, Marco Francesco Aimi
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper describes a convection-based, self-contained heat spreader that provides device-level thermal management for GaN power amplifiers. The concept connects microchannels etched into the backside of the die to a liquid flow circuit that include