Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Gary Jiang"'
Publikováno v:
SPIE Proceedings.
Optical metrology techniques are essential for process control of gate formation process steps from lithography to the dielectric, spacers, gate and straining layer deposition in sub-90nm technology nodes. Traditionally, optical metrology is based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36628bb3c9e6e635409bee16ffa58ba1
https://doi.org/10.1117/12.772615
https://doi.org/10.1117/12.772615
Publikováno v:
SPIE Proceedings.
In the sub-90 nm technology nodes, optical metrology techniques are essential for process control of gate formation steps, from lithography to etch layers such as gate, trench, and dielectric interconnect layers and to spacers and straining layer dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd3856c2997dcc26d32efc9b4e7685b
https://doi.org/10.1117/12.772580
https://doi.org/10.1117/12.772580
Autor:
Michael Kotelyanskii, Gary Jiang
Publikováno v:
SPIE Proceedings.
Optical metrology techniques are essential for process control of the gate formation process steps from lithography to the dielectric, spacers, gate and straining layer deposition in the sub-65nm technology nodes. Traditionally, optical metrology is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a670f470aa0dd758b3511d7ff2d4035
https://doi.org/10.1117/12.772682
https://doi.org/10.1117/12.772682
Publikováno v:
MRS Proceedings. 782
Precisely controlling the thickness of ultrathin silicon dioxide (SiO2) gate dielectric films is critical for high yield advanced generation semiconductor manufacturing. Advanced methods for producing ultrathin gates deposit both the gate dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33a814c935424dd647bbfb9b6c88d44
https://doi.org/10.1557/proc-782-a5.10
https://doi.org/10.1557/proc-782-a5.10