Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Gary E. Ruland"'
Autor:
Gary E. Ruland, P. L. Bonanno, Xueping Xu, Stanislav Stoupin, Hrishikesh Das, Varatharajan Rengarajan, Nadeemullah A. Mahadik, Robert E. Stahlbush
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Lattice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synchrotron X-ray rocking curve mapping (RCM), and were resolved into their two components of lattice strain (Δd/d) and lattice plane curvature (LPC) for 150 mm diamet
Autor:
Varathajan Rengarajan, Xueping Xu, Gary E. Ruland, Angelo Alberto Messina, Ilya Zwieback, M. Musolino, Hui Wang, Danilo Crippa, Michele Calabretta, Marco Mauceri
Publikováno v:
Materials Science in Semiconductor Processing. 135:106088
In recent years, the power electronics industry based on silicon carbide (SiC) has rapidly expanded, but suppliers are struggling to meet the market demand both for final devices and for the starting raw material, which nowadays consists of SiC wafer
Autor:
Gary E. Ruland, Eugene A. Imhoff, Robert E. Stahlbush, Nadeemullah A. Mahadik, Chaffra A. Affouda, Marko J. Tadjer
Publikováno v:
Materials Science Forum. 858:233-236
Basal Plane Dislocations (BPD) intersecting the SiC substrate surface were converted to threading edge dislocations (TED) by high temperature annealing of the substrates in the temperature range of 1750 °C – 1950 °C. Successively, epitaxial growt
Autor:
Gary E. Ruland, Balaji Raghothamachar, Michael Dudley, Fangzhen Wu, A. Souzis, Ping Wu, Ilya Zwieback, S. Byrappa, Thomas Anderson, Huanhuan Wang
Publikováno v:
Journal of Crystal Growth. 401:423-430
Synchrotron White Beam X-ray Topography (SWBXT) has been used to image and analyze a distinctive stacking fault pattern observed in 4H-SiC wafers. The pattern often consists of a six-pointed star comprised of multiple layers of rhombus-shaped stackin
Autor:
Ping Wu, A. Gupta, Gary E. Ruland, Mark Ramm, Varatharajan Rengarajan, Ilya Zwieback, Xueping Xu
Publikováno v:
ECS Transactions. 64:27-33
Large SiC single crystals, semi-insulating and n-type, up to 150mm in diameter are grown by II-VI Incorporated. In addition to the recent product launch of 150mm substrates, significant improvements have been made in crystal quality. The values of FW
Autor:
Gary E. Ruland, J. D. Bhawalker, P. N. Prasad, Bruce A. Reinhardt, Nilima Dinesh Kumar, Upvan Narang, Raz Gvishi
Publikováno v:
Chemistry of Materials. 7:2199-2202
The authors prepared nanostructured composite materials via sol-gel methods where doping of either C{sub 60} or bisbenzothiazole 3,4-didecyloxythiophene (BBTDOT) was employed. A multiphasic composite glass doped with both C{sub 60} and BBTDOT display
Autor:
Michael P. Scripsick, Gary E. Ruland
Publikováno v:
Advanced Solid State Lasers.
In this paper we describe three types of optical damage in KTP which we distinguish as laser induced photochromic damage (LIP), laser induced electrochromic damage (LIE), and a third unidentified type of damage. Each type of damage involves different
Autor:
Paras N. Prasad, N. D. Kumar, Jayant D. Bhawalkar, C.-F. Zhao, R. Gvishi, Guang S. He, Bruce A. Reinhardt, Gary E. Ruland
Publikováno v:
MRS Proceedings. 413
The realization of photonics technology rests on the development of multifunctional materials, which simultaneously satisfy many functional requirements. Towards this goal, we present here, the preparation of novel multifunctional nanostructured comp