Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Gary E. Miner"'
Autor:
A. Karamcheti, Husam N. Alshareef, Philip Allan Kraus, M.D. Jackson, George A. Brown, Robert W. Murto, Gennadi Bersuker, Christopher S. Olsen, Gary E. Miner, Howard R. Huff, D. Lopes, T. Y. Luo
Publikováno v:
Applied Physics Letters. 78:3875-3877
In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Che
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6753f47ff6d005bc3046367d17430589
https://doi.org/10.1063/1.1379363
https://doi.org/10.1063/1.1379363
Autor:
G. S. Higashi, A. Kang, Faran Nouri, Philip Allan Kraus, Shreyas Kher, R. Sharangpani, Steven Hung, S. Muthukrishnan, Gary E. Miner, Christopher S. Olsen, P. K. Narwankar, Khaled Ahmed, James P. Cruse, Sang Ho Bae, Thai Cheng Chua
Publikováno v:
2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).
MOSFET scaling requires an increase in the dielectric capacitance and hence a decrease in the dielectric electrical thickness. In this paper, we review the scaling trends for the gate dielectric and the gate electrode as the industry faces the challe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08cf5168e73aa73b8145b4e0d09a78bd
https://doi.org/10.1109/icicdt.2004.1309961
https://doi.org/10.1109/icicdt.2004.1309961
Autor:
D. Lopes, B. Crivelli, N. Astici, L. Vanzetti, Massimo Bersani, A. P. Caricato, Maria Luisa Polignano, F. Cazzaniga, Gary E. Miner, Guangcai Xing, R. Zonca, Satheesh Kuppurao, M. Alessandri, M. Sbetti, S. Nesso
Publikováno v:
MRS Proceedings. 592
In this paper a systematic investigation of nitrided oxides obtained by Rapid Thermal Oxidation/Nitridation (RTO/RTN) in AMAT Centura System is reported. Two different aspects were considered: first the comparison between single wafers and batch tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a96c3eca2faae9457e915c45e7e816e
https://doi.org/10.1557/proc-592-141
https://doi.org/10.1557/proc-592-141
Autor:
M. Sbetti, Satheesh Kuppurao, M. Alessandri, Massimo Bersani, Gabriella Ghidini, D. Lopes, B. Crivelli, L. Vanzetti, R. Zonca, Gary E. Miner, Guangcai Xing, M. L. Polignano, D. Brazzelli, A. P. Caricato, N. Astici
Publikováno v:
Scopus-Elsevier
A newly-developed technique for the simultaneos characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This technique is based upon surface recombin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a641b23116d3f03885832a4092888ea7
https://doi.org/10.1557/proc-591-207
https://doi.org/10.1557/proc-591-207
Publikováno v:
MRS Proceedings. 525
In order to prevent boron penetration in PMOS transistors without degrading channel mobility, it is necessary to engineer the distribution of nitrogen introduced into the gate oxide. We have investigated methods of engineering this distribution using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d5163d166fb05273a5773a4f782c4e
https://doi.org/10.1557/proc-525-181
https://doi.org/10.1557/proc-525-181
Autor:
D. Lopes, J. Piccirillo, Boyang Lin, Gary E. Miner, Ming Hwang, Kathy OConnor, Gary Xing, M. F. Pas, Wei-Yung Hsu, Jiong-Ping Lu
Publikováno v:
MRS Proceedings. 525
In various device fabrication processes, such as in metal gate and low resistance word line fabrication, one needs to be able to oxidize Si without oxidizing metals present. We developed such a process using a combination of H2 and O2 in the H2 rich
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d4fa7548115d533bdaf8f15a3fd5d0
https://doi.org/10.1557/proc-525-359
https://doi.org/10.1557/proc-525-359
Publikováno v:
MRS Proceedings. 525
This paper reviews work to develop and improve the temperature measurement and control technology of a commercial rapid thermal processing (RTP) system. A description of the main features of this system is given, which includes a concentric multi-zon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9321ad22fe20aaa09029811ef2123cce
https://doi.org/10.1557/proc-525-71
https://doi.org/10.1557/proc-525-71
Autor:
Joel Barnett, David C. Frystak, Gary E. Miner, John Kuehne, Phil Grothe, Rick L. Wise, Burt W. Fowler
Publikováno v:
MRS Proceedings. 470
A single wafer gate cluster tool has been evaluated in an effort to quantify the effects of gate clustering on defect density, process capability and device performance. The single wafer gate cluster tool consists of a hydrofluoric vapor (HF-vapor) p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d87f94cead412304b00a0f552a38a779
https://doi.org/10.1557/proc-470-221
https://doi.org/10.1557/proc-470-221
Publikováno v:
MRS Proceedings. 470
In this paper, we report the study of rapid thermal oxidation of silicon in N2O ambient using the Applied Materials RTP Centura rapid thermal processor, and N2O oxide thickness and compositional uniformities with respect to gas flow rate and wafer ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c29225f6db3f9685f74236f9c96e00d
https://doi.org/10.1557/proc-470-361
https://doi.org/10.1557/proc-470-361
Publikováno v:
MRS Proceedings. 470
Nitric oxide rapid thermal nitridation of thin gate oxides was investigated. Oxides from 25 to 55 Å were grown in O2 and subsequently nitrided in a nitric oxide (NO) ambient using an Applied Materials RTP Centura chamber. Nitrogen incorporation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1b24c6e53bd92934cdedcd28b220207
https://doi.org/10.1557/proc-470-381
https://doi.org/10.1557/proc-470-381