Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Gary E. Flores"'
Autor:
Gary E. Flores, D.H. Norbury
Publikováno v:
[1991 Proceedings] IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop.
The effective implementation of a three-level sequential experimentation strategy has been illustrated for systematically and efficiently optimizing a novel dual-tone lithographic process. Starting from an initial group of seven factors, the design s
Autor:
Royal Cherry, Ed C. Lee, Emir Gurer, Gary E. Flores, Sandra S. Ooka, Murthy Krishna, John Salois, Reese Reynolds
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moves into deeper sub-quarter micro regime, minimization of post develop process defects is of paramount significance in manufacturing environments. Reduce defects levels can significantly increase the yield in productio
Autor:
Reese Reynolds, Gary E. Flores, Murthy Krishna, John Salois, Emir Gurer, Kevin M. Golden, Scott C. Wackerman, Ed C. Lee, John W. Lewellen
Publikováno v:
SPIE Proceedings.
The first objective of this project was to characterize the lithographic performance of an advanced Acetal-based DUV resists. This resist is targeted for 0.25-0.18 micron geometries. The sensitivity of film thickness and uniformity to critical proces
Publikováno v:
SPIE Proceedings.
With the semiconductor industry moving towards deeper submicron device geometries, lithography is an increasingly critical step in the semiconductor manufacturing process. This places great emphasis on attaining tighter resist thickness uniformity. T
Publikováno v:
SPIE Proceedings.
Modem package designs generate a large amount of stress on the die which can be controlled using a thick film of polyimide over the passivation layer. Polyimide film thicknesses in excess of twenty microns at exposure are becoming common for very thi
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography X.
For optimum optical lithography it is critical to maintain the wafer plane in the aerial image plane of the stepper since the aerial image plane is the stepper focus plane. There are a variety of off-line measurement techniques to independently verif
Publikováno v:
SPIE Proceedings.
Mix-and-match lithography continues to gain acceptance as a valuable strategy for reducing capital costs and increasing throughput productivity in semiconductor manufacturing. The successful implementation of mix-and-match lithography requires consid
Publikováno v:
SPIE Proceedings.
Semiconductor lithography manufacturing presents a major challenge for the application of classical Statistical Process Control (SPC) methodologies due to the complex nature of this process. For example, difficulties can occur due to inadequate data
Publikováno v:
SPIE Proceedings.
In this study, the distortion signature of an Ultratech 2244i lens was measured using an advanced registration measurement system. A correction for this distortion signature was applied to the design database and a mix-and-match test reticle fabricat
Publikováno v:
SPIE Proceedings.
In this study, a large field 1x stepper was matched to an advanced 5x reduction stepper using a 2:1 field matching scheme. The 1x field is a 44 X 22 mm rectangle that is symmetrically aligned to two 22 X 22 mm 5x reduction fields. Overlay measurement