Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Gary E. Bulman"'
Publikováno v:
Journal of Electronic Materials. 42:2888-2896
We studied the microstructural characteristics and electrical properties of epitaxial Ge films grown on Si(001) substrates by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The films were grown using a two-step tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3610229762b7f7a69b76c40d8d4f356f
https://doi.org/10.1007/s11664-013-2686-9
https://doi.org/10.1007/s11664-013-2686-9
Autor:
Michael Manno, Nicholas Baldasaro, Gary E. Bulman, Bao Yang, Avram Bar-Cohen, Phil Barletta, Jay Lewis
Publikováno v:
Nature Communications
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
In present-day high-performance electronic components, the generated heat loads result in unacceptably high junction temperatures and reduced component lifetimes. Thermoelectric modules can, in principle, enhance heat removal and reduce the temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4a9006644c5086ea6179d24314e6cfd
https://doi.org/10.1038/ncomms10302
https://doi.org/10.1038/ncomms10302
Publikováno v:
Journal of Electronic Materials. 42:40-46
An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual thermal strain to measure the Poisson ratio of Ge films grown on Si ⟨001⟩ substrates, using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036eb529cba0981573b82e7b1c4fd0e3
https://doi.org/10.1007/s11664-012-2337-6
https://doi.org/10.1007/s11664-012-2337-6
Autor:
Nathan Ritz, Gary E. Bulman, Michael Acree, Ryan Wiitala, Rama Venkatasubramanian, Ed Siivola
Publikováno v:
Journal of Electronic Materials. 38:1510-1515
Thin-film Bi2Te3- and Sb2Te3-based superlattice (SL) thermoelectric (TE) devices are an enabling technology for high-power and low-temperature applications, which include low-noise amplifier cooling, electronics hot-spot cooling, radio frequency (RF)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b43d64063f36f4fbe70f23f6d63b59e
https://doi.org/10.1007/s11664-009-0742-2
https://doi.org/10.1007/s11664-009-0742-2
Publikováno v:
Thin Solid Films. 520:2170-2172
InAs/GaSb type II superlattices (T2SLs) were grown heteroepitaxially, via metallorganic chemical vapor deposition (MOCVD), on GaAs substrates. The 7% lattice mismatch between the T2SL and GaAs substrate was accommodated through the use of a two-step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::861cda2bbbd3321c7559a80076341044
https://doi.org/10.1016/j.tsf.2011.10.007
https://doi.org/10.1016/j.tsf.2011.10.007
Publikováno v:
SPIE Proceedings.
Over 2.5 billion people do not have access to safe and effective sanitation. Without a sanitary sewer infrastructure, self-contained modular systems can provide solutions for these people in the developing world and remote areas. Our team is building
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3a0d149557e18af4d253b67392b3ab
https://doi.org/10.1117/12.2073696
https://doi.org/10.1117/12.2073696
Autor:
Gary E. Bulman, Bruce Cook
Publikováno v:
SPIE Proceedings.
To improve the thermal-to-electrical conversion efficiency of waste exhaust heat at temperatures in the vicinity of 750°C, RTI has combined two different high-performance materials to form a high ZT, hybrid thermoelectric (TE) device. Recently-devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82cdeea471641f38698c65fb13403f46
https://doi.org/10.1117/12.2057661
https://doi.org/10.1117/12.2057661
Autor:
Bruce Cook, Gary E. Bulman
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52b8acf7c1095d1beb4af52b66ff9d3
https://doi.org/10.1117/2.1201403.005430
https://doi.org/10.1117/2.1201403.005430
Autor:
Jayesh Bharathan, Gary E. Bulman
Publikováno v:
The 9th International Conference on Group IV Photonics (GFP).
Germanium (Ge) offers a distinct advantage over silicon (Si) in terms of its superior electron and hole mobility1. In addition, its small direct bandgap of 0.8 eV at room temperature makes it possible to design efficient photodetectors operating in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd0c8f0fbcf592954cb69927bc95b14d
https://doi.org/10.1109/group4.2012.6324094
https://doi.org/10.1109/group4.2012.6324094
Publikováno v:
Energy Harvesting and Storage: Materials, Devices, and Applications II.
Thin film superlattice (SL) based thermoelectric (TE) devices offer the potential for improved efficiency and high heat flux cooling over conventional bulk materials. We have demonstrated external cooling of 55K and heat pumping capacity of 128 W/cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::501af577b0b5debaeab92fff1de34931
https://doi.org/10.1117/12.887143
https://doi.org/10.1117/12.887143