Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gary Ditmer"'
Publikováno v:
ECS Transactions. 27:139-144
Post implant resist strip for sub-65 nm highdose implant (HDI) poses challenges with regard to Si substrate loss due to oxidation. In order to ensure the desired device characteristics, this loss must be kept to a minimum, typically less than 4A loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80a008368eb77c05d969dbac0b4de82
https://doi.org/10.1149/1.3360609
https://doi.org/10.1149/1.3360609
Autor:
Yosuke Kimura, Akiko Kobayashi, Akinori Nakano, Adrian Kiermasz, Gary Ditmer, Kiyohiro Matsushita, Nobuyoshi Kobayashi, Dai Ishikawa
Publikováno v:
Japanese Journal of Applied Physics. 52:05FG01
We have investigated plasma-enhanced atomic layer deposition (PEALD) SiN pore-sealing film formation and diffusion behavior on highly porous SiOCH films. Mass measurement revealed the diffusion of the precursor used in PEALD into pores of SiOCH films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f23399e23d0336d4b787bda9604524
https://doi.org/10.7567/jjap.52.05fg01
https://doi.org/10.7567/jjap.52.05fg01