Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gary Dale Williams"'
Autor:
R. Divakaruni, Gary B. Bronner, A. Sudo, Yuzo Fukuzaki, T. Mii, J. Nuetzel, Thomas S. Rupp, B. Lee, S. Halle, R. Srinivasan, Y. Takegawa, G.K. Worth, Gary Dale Williams, Byeong Y. Kim
Publikováno v:
2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).
A self-aligned buried strap process is developed, using nitride frame with oxide hard mask in shallow trench isolation (STI). The connection between cell access transistor and storage node electrode is a key process in trench type DRAM fabrication. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42c53a79d353fa2987ce7601d9dab21
https://doi.org/10.1109/vtsa.2001.934490
https://doi.org/10.1109/vtsa.2001.934490
Autor:
Donald C. Wheeler, Santo Credendino, Gary Dale Williams, Timothy J. Wiltshire, Franz X. Zach, Byeong Y. Kim, Alfred K. K. Wong, Yuzo Fukuzaki, Eric Alfred Lehner, Zhijian G. Lu, Xiaoming Yin
Publikováno v:
SPIE Proceedings.
The impact of alignment mark structure, mark geometry, and stepper alignment optical system on mark signal contrast was investigated using computer simulation. Several sub-wavelength poly silicon recessed film stack alignment targets of advanced memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b046ad29d68fcdeeaecf4b7748d5b36
https://doi.org/10.1117/12.386501
https://doi.org/10.1117/12.386501