Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gary A. Tressler"'
Autor:
Anil B. Lingambudi, Janani Swaminathan, Trinadhachari Kosuru, Krishna Thangaraj, Gary A. Tressler, Steve Wilson, Tom Kroetsch, Navya Chaitanya Gogula, Preetham Raghavendra
Publikováno v:
2020 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS).
Spin Torque Transfer Magneto-resistive Random-Access Memory (STT-MRAM) is a type of non-volatile memory that stores data in magnetic domains. It is a very interesting market space that STT-MRAM will support, trying to take the best of both worlds, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ca86ab85a411c1528a4d91330d3d99
https://doi.org/10.1109/edaps50281.2020.9312911
https://doi.org/10.1109/edaps50281.2020.9312911
Autor:
Aaron D. Fry, Patrick Breen, Nikolaos Papandreou, Radu Stoica, Timothy J. Fisher, Milos Stanisavljevic, Sasa Tomic, Thomas Parnell, Roman A. Pletka, Haralampos Pozidis, Gary A. Tressler, Andrew D. Walls, Nikolas Ioannou
Publikováno v:
IRPS
3D QLC NAND has recently entered the SSD market offering capacity increase and cost reduction compared to 3D TLC NAND. However, the endurance of QLC NAND is limited. Moreover, due to reduction of the available margin between the programmed threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb44c9d53dd3e06e3ba23ed388bf00da
https://doi.org/10.1109/irps45951.2020.9129620
https://doi.org/10.1109/irps45951.2020.9129620
Autor:
Nikolas Ioannou, Thomas Parnell, Aaron D. Fry, Nikolaos Papandreou, Patrick Breen, Timothy J. Fisher, Haralampos Pozidis, Gary A. Tressler, Sasa Tomic, Roman A. Pletka
Publikováno v:
IRPS
3D NAND flash memory has entered dynamically into the space of enterprise server and storage systems, offering significantly higher capacity and better endurance than the latest 2D technology node. Moreover, the advancements in vertical stacking, cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85b4f3759189f6de4bdb6cc9d72f184f
https://doi.org/10.1109/irps.2019.8720454
https://doi.org/10.1109/irps.2019.8720454
Autor:
Thomas Parnell, Nikolaos Papandreou, Charles J. Camp, Thomas Mittelholzer, Thomas D. Griffin, Haralampos Pozidis, Gary A. Tressler, Evangelos Eleftheriou, Andrew D. Walls
Publikováno v:
ACM Transactions on Design Automation of Electronic Systems. 20:1-24
NAND flash memory is not only the ubiquitous storage medium in consumer applications but has also started to appear in enterprise storage systems as well. MLC and TLC flash technology made it possible to store multiple bits in the same silicon area a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5efcd83ee53879f2f1f3f590c6eea330
https://doi.org/10.1145/2699866
https://doi.org/10.1145/2699866
Autor:
Charles J. Camp, Thomas Mittelholzer, Thomas Parnell, Nikolaos Papandreou, Thomas D. Griffin, Haris Pozidis, Timothy J. Fisher, Gary A. Tressler
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
The effect of read disturb on partially programmed blocks of MLC NAND is evaluated using experimental data from 2y-, 1y- and 1x-nm Flash memory devices. We demonstrate that when a partially programmed block is exposed to a large number of reads befor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41c2bd4729ca2490db25ae1798becce6
https://doi.org/10.1109/imw.2016.7495267
https://doi.org/10.1109/imw.2016.7495267
Autor:
Thomas D. Griffin, Nikolaos Papandreou, Evangelos Eleftheriou, Thomas Parnell, Charles J. Camp, Thomas Mittelholzer, Andrew D. Walls, Haralampos Pozidis, Gary A. Tressler
Publikováno v:
ACM Great Lakes Symposium on VLSI
NAND Flash memory is not only the ubiquitous storage medium in consumer applications, but has also started to appear in enterprise storage systems as well. MLC and TLC Flash technology made it possible to store multiple bits in the same silicon area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f566b6ff75be1a7f89e5e3d8cbbe0db9
https://doi.org/10.1145/2591513.2591594
https://doi.org/10.1145/2591513.2591594