Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Gary A. Sevison"'
Autor:
Gary A. Sevison, Joshua A. Burrow, Haiyun Guo, Andrew Sarangan, Joshua R. Hendrickson, Imad Agha
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085327-085327-6 (2021)
We experimentally probe the multilevel response of GeTe, Ge2Sb2Te5 (GST), and 4% tungsten-doped GST (W-GST) phase change materials (PCMs) using two wavelengths of light: 1550 nm, which is useful for telecom-applications, and near-infrared 780 nm, whi
Externí odkaz:
https://doaj.org/article/d4032a20b68746219644fc38885581f8
Autor:
Andrew Sarangan, Jaeho Lee, Joshua R. Hendrickson, Joshua A. Burrow, Heungdong Kwon, Mehdi Asheghi, Christopher Perez, Imad Agha, Kenneth E. Goodson, Shiva Farzinazar, Gary A. Sevison
Publikováno v:
ACS Photonics. 7:480-487
We propose and demonstrate a two-dimensional 4-bit fully optical nonvolatile memory using Ge2Sb2Te5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we...
Autor:
Chiao Chang, Hung-Hsiang Cheng, Gary A. Sevison, Joshua R. Hendrickson, Zairui Li, Imad Agha, Jay Mathews, Richard A. Soref, Greg Sun
Publikováno v:
Materials, Vol 15, Iss 989, p 989 (2022)
Materials; Volume 15; Issue 3; Pages: 989
Materials; Volume 15; Issue 3; Pages: 989
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident op
Autor:
Gary A. Sevison, Trent Malone, Remona Heenkenda, Joshua A. Burrow, Andrew Sarangan, Joshua R. Hendrickson, Imad Agha
Publikováno v:
Optical Materials Express. 12:2899
For active beam manipulation devices, such as those based on liquid crystals, phase-change materials, or electro-optic materials, measuring accumulated phase of the light passing through a layer of the material is imperative to understand the functio
Publikováno v:
Conference on Lasers and Electro-Optics.
We created a system for the characterization of Ge2Sb2Te5 starting with a 1550 nm CW laser and utilizing second harmonic generation through a PPLN crystal in order to achieve full pulse control at 775 nm.
Autor:
Gary A. Sevison, Kenneth E. Goodson, Imad Agha, Mehdi Asheghi, Andrew Sarangan, Joshua A. Burrow, Joshua R. Hendrickson
Publikováno v:
Conference on Lasers and Electro-Optics.
We present an advancement towards high speed (sub ps) phase change material based spatial light modulators by electrically addressing single pixels with high-speed optical monitoring at 1550nm light.
Autor:
Haiyun Guo, Joshua R. Hendrickson, Joshua A. Burrow, Andrew Sarangan, Imad Agha, Gary A. Sevison
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085327-085327-6 (2021)
We experimentally probe the multilevel response of GeTe, Ge2Sb2Te5 (GST), and 4% tungsten-doped GST (W-GST) phase change materials (PCMs) using two wavelengths of light: 1550 nm, which is useful for telecom-applications, and near-infrared 780 nm, whi
Autor:
Joshua A. Burrow, Pengfei Guo, Gary A. Sevison, Heungdong Kwon, Christopher Perez, Mehdi Asheghi, Joshua R. Hendrickson, Andrew Sarangan, Kenneth E. Goodson, Imad Agha
Publikováno v:
Conference on Lasers and Electro-Optics.
Autor:
Gary A. Sevison, Andrew Sarangan, Mehdi Asheghi, Kenneth E. Goodson, Christopher Perez, Imad Agha, Evan M. Smith, Joshua R. Hendrickson, Pengfei Guo, Joshua A. Burrow, Heungdong Kwon
Publikováno v:
Applied Physics Letters. 116:131901
The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge 2 Sb 2 Te 5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demons
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, and Devices XV.
A magnetron co-sputtering system was used for producing nickel-doped Ge2Sb2Te5 (GST-Ni) thin films. The nickel content in the thin film was adjusted by the ratio of the plasma discharge power applied to the GST and nickel targets, as well as a physic