Zobrazeno 1 - 10
of 426
pro vyhledávání: '"Garrido, Sergio A."'
Autor:
Mouriño, Paula, Mercadé, Laura, Lozano, Miguel Sinusía, Resta, Raquel, Griol, Amadeu, Saddik, Karim Ben, Barrigón, Enrique, Fernández-Garrido, Sergio, García, Basilio Javier, Martínez, Alejandro, Gómez, Víctor J.
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V substrates to
Externí odkaz:
http://arxiv.org/abs/2403.19230
Publikováno v:
Nano Lett. 2015, 15, 3, 1930
We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of nanowire ensembles is well described by a double logistic function. Th
Externí odkaz:
http://arxiv.org/abs/2402.01757
Autor:
Fernández-Garrido, Sergio, Kong, Xiang, Gotschke, Tobias, Calarco, Raffaella, Geelhaar, Lutz, Trampert, Achim, Brandt, Oliver
Publikováno v:
Nano Lett. 2012, 12, 12, 6119
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained
Externí odkaz:
http://arxiv.org/abs/2402.01755
Autor:
Fernández-Garrido, Sergio, Kaganer, Vladimir M., Sabelfeld, Karl K., Gotschke, Tobias, Grandal, Javier, Calleja, Enrique, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Nano Lett. 2013, 13, 7, 3274
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in
Externí odkaz:
http://arxiv.org/abs/2402.01756
Publikováno v:
Appl. Phys. Lett. 101, 032404 (2012)
We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection. Current-voltage-temperature me
Externí odkaz:
http://arxiv.org/abs/2401.16887
Autor:
Fernández-Garrido, Sergio, Ramsteiner, Manfred, Gao, Guanhui, Galves, Lauren A., Sharma, Bharat, Corfdir, Pierre, Calabrese, Gabriele, Schiaber, Ziani de Souza, Pfüller, Carsten, Trampert, Achim, Lopes, João Marcelo J., Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
Nano Lett. 2017, 17, 9, 5213
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesize
Externí odkaz:
http://arxiv.org/abs/2401.16874
Autor:
Zettler, Johannes K., Corfdir, Pierre, Hauswald, Christian, Luna, Esperanza, Jahn, Uwe, Flissikowski, Timur, Schmidt, Emanuel, Ronning, Carsten, Trampert, Achim, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver, Fernández-Garrido, Sergio
Publikováno v:
Nano Letters 2016, 16, 2, 973
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor hetero
Externí odkaz:
http://arxiv.org/abs/2401.16868
Autor:
Schiaber, Ziani de Souza, Calabrese, Gabriele, Kong, Xiang, Trampert, Achim, Jenichen, Bernd, da Silva, José Humberto Dias, Geelhaar, Lutz, Brandt, Oliver, Fernández-Garrido, Sergio
Publikováno v:
Nano Lett. 2017, 17, 63
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically uniform cati
Externí odkaz:
http://arxiv.org/abs/2401.16514
Autor:
Deilen, Silvana, Garrido, Sergio Hernández, Lapshinova-Koltunski, Ekaterina, Maaß, Christiane
This study sets out to investigate the feasibility of using ChatGPT to translate citizen-oriented administrative texts into German Easy Language, a simplified, controlled language variety that is adapted to the needs of people with reading impairment
Externí odkaz:
http://arxiv.org/abs/2308.11563
Autor:
van Treeck, David, Lähnemann, Jonas, Gao, Guanhui, Garrido, Sergio Fernández, Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
APL Materials 11, 091120 (2023)
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each cons
Externí odkaz:
http://arxiv.org/abs/2307.11235