Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Garratt, Elias J."'
Autor:
Biswas, Abhijit, Alvarez, Gustavo A., Li, Tao, Christiansen-Salameh, Joyce, Jeong, Eugene, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Gray, Tia, Zhang, Xiang, Pieshkov, Tymofii S., Kannan, Harikishan, Elkins, Jacob, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Pate, Bradford B., Ivanov, Tony G., Zhao, Yuji, Tian, Zhiting, Ajayan, Pulickel M.
Publikováno v:
Phys. Rev. Materials 7, 094602 (2023)
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremel
Externí odkaz:
http://arxiv.org/abs/2305.13306
Autor:
Biswas, Abhijit, Xu, Rui, Alvarez, Gustavo A., Zhang, Jin, Christiansen-Salameh, Joyce, Puthirath, Anand B., Burns, Kory, Hachtel, Jordan A., Li, Tao, Iyengar, Sathvik Ajay, Gray, Tia, Li, Chenxi, Zhang, Xiang, Kannan, Harikishan, Elkins, Jacob, Pieshkov, Tymofii S., Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Ivanov, Tony, Pate, Bradford B., Zhao, Yuji, Zhu, Hanyu, Tian, Zhiting, Rubio, Angel, Ajayan, Pulickel M.
Publikováno v:
Adv. Mater. 2023, 2304624
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers
Externí odkaz:
http://arxiv.org/abs/2304.12312
Autor:
Biswas, Abhijit, Xu, Rui, Christiansen-Salameh, Joyce, Jeong, Eugene, Alvarez, Gustavo A., Li, Chenxi, Puthirath, Anand B., Gao, Bin, Garg, Arushi, Gray, Tia, Kannan, Harikishan, Zhang, Xiang, Elkins, Jacob, Pieshkov, Tymofii S., Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Pate, Bradford B., Ivanov, Tony, Garratt, Elias J., Dai, Pengcheng, Zhu, Hanyu, Tian, Zhiting, Ajayan, Pulickel M.
Publikováno v:
Nano Lett. 2023, 23, 15, 6927
Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate a
Externí odkaz:
http://arxiv.org/abs/2304.08474
Autor:
Gray, Tia, Zhang, Xiang, Biswas, Abhijit, Terlier, Tanguy, Oliveira, Eliezer F., Puthirath, Anand B., Li, Chenxi, Pieshkov, Tymofii S., Garratt, Elias J., Neupane, Mahesh R., Pate, Bradford B., Birdwell, A. Glen, Ivanov, Tony G., Vajtai, Robert, Ajayan, Pulickel M.
Publikováno v:
In Carbon September 2024 228
Akademický článek
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Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Biswas, Abhijit, Alvarez, Gustavo A., Li, Tao, Christiansen-Salameh, Joyce, Jeong, Eugene, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Gray, Tia, Zhang, Xiang, Pieshkov, Tymofii S., Kannan, Harikishan, Elkins, Jacob, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Pate, Bradford B., Ivanov, Tony G., Zhao, Yuji, Tian, Zhiting, Ajayan, Pulickel M.
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5c60699e1f243c5e57d43a2300e2c59
http://arxiv.org/abs/2305.13306
http://arxiv.org/abs/2305.13306