Zobrazeno 1 - 10
of 678
pro vyhledávání: '"Garello K"'
Autor:
Wu, Y. C., Garello, K., Kim, W., Gupta, M., Perumkunnil, M., Kateel, V., Couet, S., Carpenter, R., Rao, S., Van Beek, S., Sethu, K. K. Vudya, Yasin, F., Crotti, D., Kar, G. S.
Publikováno v:
Phys. Rev. Applied 15, 064015 (2021)
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applica
Externí odkaz:
http://arxiv.org/abs/2104.09599
Autor:
Garello, K., Yasin, F., Hody, H., Couet, S., Souriau, L., Sharifi, S. H., Swerts, J., Carpenter, R., Rao, S., Kim, W., Wu, J., Sethu, K. K. V., Pak, M., Jossart, N., Crotti, D., Furnémont, A., Kar, G. S.
Publikováno v:
2019 Symposium on VLSI Technology
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we sho
Externí odkaz:
http://arxiv.org/abs/1907.08012
Autor:
Gebeyehu, Z. M., Parui, S., Sierra, J. F., Timmermans, M., Esplandiu, M. J., Brems, S., Huyghebaert, C., Garello, K., Costache, M. V., Valenzuela, S. O.
Publikováno v:
2D Materials, 6, 034003 (2019)
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $\mu$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer g
Externí odkaz:
http://arxiv.org/abs/1905.04953
Autor:
Stamm, C., Murer, C., Acremann, Y., Baumgartner, M., Gort, R., Däster, S., Kleibert, A., Garello, K., Feng, J., Gabureac, M., Chen, Z., Stöhr, J., Gambardella, P.
Publikováno v:
Phys. Rev. B 100, 024426 (2019)
An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these interfacial magne
Externí odkaz:
http://arxiv.org/abs/1904.00877
Autor:
Garello, K., Yasin, F., Couet, S., Souriau, L., Swerts, J., Rao, S., Van Beek, S., Kim, W., Liu, E., Kundu, S., Tsvetanova, D., Jossart, N., Croes, K., Grimaldi, E., Baumgartner, M., Crotti, D., Furnémont, A., Gambardella, P., Kar, G. S.
Publikováno v:
2018 IEEE Symposium on VLSI Circuits
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have ver
Externí odkaz:
http://arxiv.org/abs/1810.10356
Autor:
Manchon, A., Zelezný, J., Miron, I. M., Jungwirth, T., Sinova, J., Thiaville, A., Garello, K., Gambardella, P.
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced
Externí odkaz:
http://arxiv.org/abs/1801.09636
Autor:
Mikuszeit, N., Boulle, O., Miron, I. M., Garello, K., Gambardella, P., Gaudin, G., Buda-Prejbeanu, L. D.
Publikováno v:
Phys. Rev. B 92, 144424 (2015)
We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane
Externí odkaz:
http://arxiv.org/abs/1509.07341
Autor:
Vudya Sethu KK; IMEC, Kapledreef 75, 3001 Leuven, Belgium.; Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, Leuven 3001, Belgium., Yasin F; IMEC, Kapledreef 75, 3001 Leuven, Belgium., Swerts J; IMEC, Kapledreef 75, 3001 Leuven, Belgium., Sorée B; IMEC, Kapledreef 75, 3001 Leuven, Belgium.; Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, Leuven 3001, Belgium.; Physics Department, University of Antwerp, Groenenborgerlaan 171, Antwerpen B-2020, Belgium., De Boeck J; IMEC, Kapledreef 75, 3001 Leuven, Belgium.; Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, Leuven 3001, Belgium., Kar GS; IMEC, Kapledreef 75, 3001 Leuven, Belgium., Garello K; CEA, CNRS, Grenoble INP, SPINTEC, Université Grenoble Alpes, 38054 Grenoble, France., Couet S; IMEC, Kapledreef 75, 3001 Leuven, Belgium.
Publikováno v:
ACS nano [ACS Nano] 2024 May 28; Vol. 18 (21), pp. 13506-13516. Date of Electronic Publication: 2024 May 15.
Autor:
Urrestarazu Larrañaga J; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Sisodia N; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Guedas R; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Pham VT; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France.; Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France., Di Manici I; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Masseboeuf A; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Garello K; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Disdier F; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Fernandez B; Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France., Wintz S; Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart, Germany.; Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany., Weigand M; Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany., Belmeguenai M; LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse, France., Pizzini S; Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France., Sousa RC; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Buda-Prejbeanu LD; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Gaudin G; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France., Boulle O; Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France.
Publikováno v:
Nano letters [Nano Lett] 2024 Mar 27; Vol. 24 (12), pp. 3557-3565. Date of Electronic Publication: 2024 Mar 18.
Autor:
Yang H; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore. eleyang@nus.edu.sg., Valenzuela SO; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain. SOV@icrea.cat.; ICREA, Institució Catalana de Recerca i Estudis Avancats, Barcelona, Spain. SOV@icrea.cat., Chshiev M; Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France.; Institut Universitaire de France (IUF), Paris, France., Couet S; Imec, Leuven, Belgium., Dieny B; Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France., Dlubak B; Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France., Fert A; Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France., Garello K; Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France.; Imec, Leuven, Belgium., Jamet M; Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France., Jeong DE; R&D Center, Samsung Electronics Co., Hwasung, South Korea., Lee K; Foundry Business, Samsung Electronics Co., Giheung, South Korea., Lee T; GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, Singapore., Martin MB; Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.; Thales Research and Technology, Palaiseau, France., Kar GS; Imec, Leuven, Belgium., Sénéor P; Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France., Shin HJ; Inorganic Material Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, South Korea., Roche S; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain. stephan.roche@icn2.cat.; ICREA, Institució Catalana de Recerca i Estudis Avancats, Barcelona, Spain. stephan.roche@icn2.cat.
Publikováno v:
Nature [Nature] 2022 Jun; Vol. 606 (7915), pp. 663-673. Date of Electronic Publication: 2022 Jun 22.