Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Garello, Kevin"'
Autor:
Dieny, Bernard, Aggarwal, Sanjeev, Naik, Vinayak Bharat, Couet, Sebastien, Coughlin, Thomas, Fukami, Shunsuke, Garello, Kevin, Guedj, Jack, Incorvia, Jean Anne C., Lebrun, Laurent, Lee, Kyung-Jin, Leonelli, Daniele, Noh, Yonghwan, Salimy, Siamak, Soss, Steven, Thomas, Luc, Wang, Weigang, Worledge, Daniel
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of mag
Externí odkaz:
http://arxiv.org/abs/2409.05584
Autor:
Larrañaga, by J. Urrestarazu, Sisodia, Naveen, Pham, Van Tuong, Di Manici, Ilaria, Masseboeuf, Aurélien, Garello, Kevin, Disdier, Florian, Fernandez, Bruno, Wintz, Sebastian, Weigand, Markus, Belmeguenai, Mohamed, Pizzini, Stefania, Sousa, Ricardo, Buda-Prejbeanu, Liliana, Gaudin, Gilles, Boulle, Olivier
Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced mani
Externí odkaz:
http://arxiv.org/abs/2308.00445
Autor:
Palhares, Joao Henrique Quintino, Beilliard, Yann, Sandrini, Jury, Arnaud, Franck, Garello, Kevin, Prenat, Guillaume, Anghel, Lorena, Alibart, Fabien, Drouin, Dominique, Galy, Philippe
In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the inte
Externí odkaz:
http://arxiv.org/abs/2305.16187
Autor:
Kateel, Vaishnavi, Krizakova, Viola, Rao, Siddharth, Cai, Kaiming, Gupta, Mohit, Monteiro, Maxwel Gama, Yasin, Farrukh, Sorée, Bart, De Boeck, Johan, Couet, Sebastien, Gambardella, Pietro, Kar, Gouri Sankar, Garello, Kevin
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the
Externí odkaz:
http://arxiv.org/abs/2305.03961
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer torques (
Externí odkaz:
http://arxiv.org/abs/2207.11974
Autor:
Krizakova, Viola, Hoffmann, Marco, Kateel, Vaishnavi, Rao, Siddharth, Couet, Sebastien, Kar, Gouri Sankar, Garello, Kevin, Gambardella, Pietro
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike torque assis
Externí odkaz:
http://arxiv.org/abs/2206.14587
Autor:
Grezes, Cécile, Kandazoglou, Aurélie, Cosset-Cheneau, Maxen, Arche, Luis, Noël, Paul, Sgarro, Paolo, Auffret, Stephane, Garello, Kevin, Bibes, Manuel, Vila, Laurent, Attané, Jean-Philippe
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional elect
Externí odkaz:
http://arxiv.org/abs/2206.03068
Autor:
Krizakova, Viola, Grimaldi, Eva, Garello, Kevin, Sala, Giacomo, Couet, Sebastien, Kar, Gouri Sankar, Gambardella, Pietro
Publikováno v:
Physical Review Applied 15, 054055 (2021)
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SO
Externí odkaz:
http://arxiv.org/abs/2106.01054
Autor:
Shao, Qiming, Li, Peng, Liu, Luqiao, Yang, Hyunsoo, Fukami, Shunsuke, Razavi, Armin, Wu, Hao, Wang, Kang L., Freimuth, Frank, Mokrousov, Yuriy, Stiles, Mark D., Emori, Satoru, Hoffmann, Axel, Åkerman, Johan, Roy, Kaushik, Wang, Jian-Ping, Yang, See-Hun, Garello, Kevin, Zhang, Wei
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. Mor
Externí odkaz:
http://arxiv.org/abs/2104.11459
Autor:
Grimaldi, Eva, Krizakova, Viola, Sala, Giacomo, Yasin, Farrukh, Couet, Sébastien, Kar, Gouri Sankar, Garello, Kevin, Gambardella, Pietro
Publikováno v:
Nature Nanotechnology 15, 111-117 (2020)
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of
Externí odkaz:
http://arxiv.org/abs/2011.08709